DataSheet.es    


PDF RA07H0608M Data sheet ( Hoja de datos )

Número de pieza RA07H0608M
Descripción MITSUBISHI RF MOSFET MODULE
Fabricantes Mitsubishi Electric Semiconductor 
Logotipo Mitsubishi Electric Semiconductor Logotipo



Hay una vista previa y un enlace de descarga de RA07H0608M (archivo pdf) en la parte inferior de esta página.


Total 9 Páginas

No Preview Available ! RA07H0608M Hoja de datos, Descripción, Manual

ELECTROSTATIC SENSITIVE DEVICE
OBSERVE HANDLING PRECAUTIONS
MITSUBISHI RF MOSFET MODULE
RA07H0608M
68-88MHz 7W 12.5V, 2 Stage Amp. For PORTABLE/MOBILE RADIO
DESCRIPTION
The RA07H0608M is a 7-watt RF MOSFET Amplifier Module
for 12.5-volt mobile radios that operate in the 68- to 88-MHz range.
The battery can be connected directly to the drain of the
enhancement-mode MOSFET transistors. Without the gate
voltage (VGG=0V), only a small leakage current flows into the drain
and the RF input signal attenuates up to 60 dB. The output power
and drain current increase as the gate voltage increases. With a
gate voltage around 4V (minimum), output power and drain current
increases substantially. The nominal output power becomes
available at 4.5V (typical) and 5V (maximum). At VGG=5V, the
typical gate current is 1 mA.
This module is designed for non-linear FM modulation, but may
also be used for linear modulation by setting the drain quiescent
current with the gate voltage and controlling the output power with
the input power.
FEATURES
• Enhancement-Mode MOSFET Transistors
(IDD0 @ VDD=12.5V, VGG=0V)
• Pout>7W @ VDD=12.5V, VGG=5V, Pin=30mW
ηT>38% @ Pout=7W (VGG control), VDD=12.5V, Pin=30mW
• Broadband Frequency Range: 68-88MHz
• Low-Power Control Current IGG=1mA (typ) at VGG=5V
• Module Size: 30 x 10 x 5.4 mm
• Linear operation is possible by setting the quiescent drain current
with the gate voltage and controlling the output power with the
input power
BLOCK DIAGRAM
2
3
14
5
1 RF Input (Pin)
2 Gate Voltage (VGG), Power Control
3 Drain Voltage (VDD), Battery
4 RF Output (Pout)
5 RF Ground (Case)
PACKAGE CODE: H46S
ORDERING INFORMATION:
ORDER NUMBER
RA07H0608M-E01
RA07H0608M-01
(Japan - packed without desiccator)
SUPPLY FORM
Antistatic tray,
25 modules/tray
RA 07H0608M
MITSUBISHI ELECTRIC
1/9
25 April 2003

1 page




RA07H0608M pdf
ELECTROSTATIC SENSITIVE DEVICE
OBSERVE HANDLING PRECAUTIONS
MITSUBISHI RF POWER MODULE
RA07H0608M
OUTLINE DRAWING (mm)
(1.7)
(4.4)
30.0 ±0.2
26.6 ±0.2
21.2 ±0.2
2-R1.5 ±0.1
6.1 ±1
13.7 ±1
18.8 ±1
23.9 ±1
(19.2)
Ø0.45 ±0.15
1 RF Input (Pin)
2 Gate Voltage (VGG)
3 Drain Voltage (VDD)
4 RF Output (Pout)
5 RF Ground (Case)
RA 07H0608M
MITSUBISHI ELECTRIC
5/9
25 April 2003

5 Page










PáginasTotal 9 Páginas
PDF Descargar[ Datasheet RA07H0608M.PDF ]




Hoja de datos destacado

Número de piezaDescripciónFabricantes
RA07H0608MMITSUBISHI RF MOSFET MODULEMitsubishi Electric Semiconductor
Mitsubishi Electric Semiconductor

Número de piezaDescripciónFabricantes
SLA6805M

High Voltage 3 phase Motor Driver IC.

Sanken
Sanken
SDC1742

12- and 14-Bit Hybrid Synchro / Resolver-to-Digital Converters.

Analog Devices
Analog Devices


DataSheet.es es una pagina web que funciona como un repositorio de manuales o hoja de datos de muchos de los productos más populares,
permitiéndote verlos en linea o descargarlos en PDF.


DataSheet.es    |   2020   |  Privacy Policy  |  Contacto  |  Buscar