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PDF IRFPG40 Data sheet ( Hoja de datos )

Número de pieza IRFPG40
Descripción N-Channel Power MOSFET / Transistor
Fabricantes Intersil Corporation 
Logotipo Intersil Corporation Logotipo



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Data Sheet
IRFPG40
July 1999 File Number 2879.2
4.3A, 1000V, 3.500 Ohm, N-Channel
Power MOSFET
This N-Channel enhancement mode silicon gate power field
effect transistor is an advanced power MOSFET designed,
tested, and guaranteed to withstand a specified level of
energy in the breakdown avalanche mode of operation. All of
these power MOSFETs are designed for applications such
as switching regulators, switching convertors, motor drivers,
relay drivers, and drivers for high power bipolar switching
transistors requiring high speed and low gate drive power.
These types can be operated directly from integrated
circuits.
Formerly developmental type TA09850.
Ordering Information
PART NUMBER
PACKAGE
BRAND
IRFPG40
TO-247
IRFPG40
NOTE: When ordering, include the entire part number.
Features
• 4.3A, 1000V
• rDS(ON) = 3.500
• UIS SOA Rating Curve (Single Pulse)
• -55oC to 150oC Operating and Storage Temperature
Symbol
D
G
S
Packaging
JEDEC STYLE TO-247
SOURCE
DRAIN
GATE
DRAIN
(TAB)
4-365
CAUTION: These devices are sensitive to electrostatic discharge; follow proper ESD Handling Procedures.
http://www.intersil.com or 407-727-9207 | Copyright © Intersil Corporation 1999

1 page




IRFPG40 pdf
IRFPG40
Typical Performance Curves Unless Otherwise Specified (Continued)
16
14
12
VDS = 100V
10 VDS = 200V
VDS = 400V
8
6
4
2
0
0 10 20 30 40 50 60 70 80
Qg, GATE CHARGE (nC)
FIGURE 13. GATE TO SOURCE VOLTAGE vs GATE CHARGE
Test Circuits and Waveforms
VARY tP TO OBTAIN
REQUIRED PEAK IAS
VGS
tP
0V
RG
VDS
L
DUT
+
VDD
-
IAS
0.01
FIGURE 14. UNCLAMPED ENERGY TEST CIRCUIT
tP
IAS
BVDSS
VDS
VDD
0
tAV
FIGURE 15. UNCLAMPED ENERGY WAVEFORMS
RL
+
RG
VDD
-
DUT
VGS
FIGURE 16. SWITCHING TIME TEST CIRCUIT
4-369
VDS
tON
td(ON)
tr
90%
tOFF
td(OFF)
tf
90%
10%
0
VGS
10%
0
50%
PULSE WIDTH
10%
90%
50%
FIGURE 17. RESISTIVE SWITCHING WAVEFORMS

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