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PDF TA8493AF Data sheet ( Hoja de datos )

Número de pieza TA8493AF
Descripción (TA8493xx) 3-PHASE FULL WAVE BRUSHLESS DC MOTOR DRIVER IC FOR CD-ROM DRIVES
Fabricantes Toshiba Semiconductor 
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TA8493F/AF/BF
Toshiba Bipolar Linear Integrated Circuit Multi-Chip
TA8493F, TA8493AF, TA8493BF
3-Phase Full Wave Brushless DC Motor Driver IC for CD-ROM Drives
These 3-phase, full-wave, brushless DC motor driver ICs have
been developed for use in CD-ROM drive spindle motors. The
TA8493F/ AF/ BF contain in its upper stage a discrete power
transistor (P-ch-MOS) and uses direct PWM control system,
which enables the IC to provide superior thermal efficiency.
Furthermore, the multi-chip structure of this device facilitates
dispersion of the heat generated inside the package, making it
possible to suppress heat concentration.
Features
· Multi-chip structure (3 × 2SJ465 chips built-in)
· Direct PWM control system
· Drive system: 120°drive system (TA8493F/BF)
: 180°drive system (TA8493AF)
· Built-in current limiter: ILIM = 0.7 A (typ.) (at RF = 0.33 )
· Built-in reversing brake/short brake functions
· FG signal output (using hall element output signal)
· Built-in hall bias
· Built-in thermal shutdown circuit
· Package: MFP-30
Weight: 0.63 g (typ.)
1 2002-01-31

1 page




TA8493AF pdf
TA8493F/AF/BF
Characteristics
Output Circuit
Output
Resistance
(upper side)
Saturation
Voltage
(lower side)
Cut-off Current
(upper side)
Cut-off Current
(lower side)
Mode Select
Circuit
Input Voltage (H)
Input Voltage (L)
Input Current
Hysteresis
Voltage
FG Amp.
Output Voltage
(H)
Output Voltage
(L)
Short Brake
Circuit
Input Voltage (H)
Input Voltage (L)
Input Current
Triangular
Oscillation
Oscillation Circuit Frequency
Thermal Shut-down Operating
Temperature
Note2: this is not tested.
Symbol
Test
Circuit
Test Condition
RON (U)
VSAT (L)
IO = 0.6 A
4
IO = 0.6 A
Min Typ. Max Unit
¾ 0.5 1.0 W
¾ 0.4 0.8 V
IL (U)
IL (L)
VMS (H)
VMS (L)
IINMS
VHYS
VOFG (H)
VOFG (L)
VBRK (H)
VBRK (L)
IINBRK
fOSC
TSD
VL = 16 V
5
VL = 16 V
¾ ¾ 10
mA
¾ ¾ 10
CCW mode
VC > Vref, BRK: L
6 Reversing brake mode
VC > Vref, BRK: L
3.0 ¾ VCC
V
¾ ¾ 0.5
VMS = GND, (source current) ¾ ¾ 1 mA
8 ¾ 5 20 45 mVp-p
Source current: 10 mA
7
Sink current: 10 mA
VCC
- 0.5
¾
¾
V
¾ ¾ 0.5
¾
6¾
VBRK = GND, (source current)
3.0
¾
¾
¾ C = 560 pF
(Note2) ¾
¾ VCC
V
¾ 0.5
¾ 1 mA
39 ¾ kHz
Junction temperature
¾ (according to design
¾ 175 ¾
specification)
(Note2)
°C
5 2002-01-31

5 Page





TA8493AF arduino
· Hall element bias circuit
TA8493F/AF/BF
HB
The hall element bias current is turned off when the driver IC is in standby state.
Make sure that the negative hall bias line is connected to the HB pin.
The remaining voltage is as follows:
VHB = 1.2 V (typ.)
at IHB = 10 mA
Furthermore, this circuit cannot be used if FG output is necessary in standby state.
When the HB terminal is not used, the negative hall bias line must be connected to GND with a resistor in
between.
· FG amp circuit
FGO
This circuit uses a hall element signal which is output to FGO after a Schmitt stage.
The FG amp has a hysteresis of 20 mVp-p (typ.) and its output voltages are
High level: VCC - 0.5 to VCC [V]
Low level: GND to 0.5 V at IOFG = 10 mA
The FG amp is active when it is in standby state. When the hall element signal is input, the FG signal is
output.
11 2002-01-31

11 Page







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