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PDF DS1210 Data sheet ( Hoja de datos )
| Número de pieza | DS1210 | |
| Descripción | Nonvolatile Controller Chip | |
| Fabricantes | Dallas Semiconducotr | |
| Logotipo |  |
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DS1210
Nonvolatile Controller Chip
FEATURES
Converts CMOS RAMs into nonvolatile
memories
Unconditionally write protects when VCC is
out of tolerance
Automatically switches to battery when
power-fail occurs
Space saving 8-pin DIP
Consumes less than 100 nA of battery current
Tests battery condition on power up
Provides for redundant batteries
Optional 5% or 10% power-fail detection
Low forward voltage drop on the VCC switch
Optional 16-pin SOIC surface mount package
Optional industrial temperature range of
-40°C to +85°C
PIN ASSIGNMENT
VCCO 1
8 VCCI
VBAT1 2
7 VBAT2
TOL 3
6 CEO
GND 4
5 CE
DS1210 8-pin DIP (300-mil)
See Mech. Drawings Section
NC
VCCO
NC
VBAT1
NC
TOL
NC
GND
1
2
3
4
5
6
7
8
16 NC
15 VCCI
14 NC
13 VBAT2
12 NC
11 CEO
10 NC
9 CE
DS1210S 16-pin SOIC (300-mil)
See Mech. Drawings Section
PIN DESCRIPTION
VCCO
VBAT1
TOL
- RAM Supply
- + Battery 1
- Power Supply Tolerance
GND
- Ground
CE - Chip Enable Input
CEO
VBAT2
VCCI
NC
- Chip Enable Output
- + Battery 2
- + Supply
- No Connect
DESCRIPTION
The DS1210 Nonvolatile Controller Chip is a CMOS circuit which solves the application problem of
converting CMOS RAM into nonvolatile memory. Incoming power is monitored for an out-of-tolerance
condition. When such a condition is detected, chip enable is inhibited to accomplish write protection and
the battery is switched on to supply the RAM with uninterrupted power. Special circuitry uses a low-
leakage CMOS process which affords precise voltage detection at extremely low battery consumption.
The 8-pin DIP package keeps PC board real estate requirements to a minimum. By combining the
DS1210 Nonvolatile Controller Chip with a CMOS memory and batteries, nonvolatile RAM operation
can be achieved.
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CAPACITANCE
PARAMETER
Input Capacitance
Output Capacitance
SYMBOL
CIN
COUT
MIN
TYP
MAX
5
7
DS1210
(TA = 25°C)
UNITS NOTES
pF
pF
(0°C to 70°C; VCCI = 4.75V to 5.5V, PIN 3 = GND)
AC ELECTRICAL CHARACTERISTICS
(VCCI = 4.75V to 5.5V, PIN 3 = GND)
PARAMETER
SYMBOL MIN
TYP MAX UNITS NOTES
CE Propagation Delay
tPD
5
10 20
ns
5
CE High to Power-Fail
tPF
0 ns
(0°C to 70°C; VCCI = 4.75V, PIN 3 = GND; VCCI < 4.5, PIN 3 = VCCO)
Recovery at Power Up
tREC 2 80 125 ms
VCC Slew Rate Power-Down
tF
300
µs
VCC Slew Rate Power-Down
tFB
10
µs
VCC Slew Rate Power-Down
tR
0
µs
CE Pulse Width
tCE
1.5 µs
8
NOTES:
1. All voltages are referenced to ground.
2. Only one battery input is required. Unused battery inputs must be grounded.
3. Measured with VCCO and CEO open.
4. ICC01 is the maximum average load which the DS1210 can supply to the memories.
5. Measured with a load as shown in Figure 2.
6. ICC02 is the maximum average load current which the DS1210 can supply to the memories in the
battery backup mode.
7. tCE max. must be met to ensure data integrity on power loss.
8. CEO can only sustain leakage current in the battery backup mode.
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5 Page | ||
| Páginas | Total 6 Páginas | |
| PDF Descargar | [ Datasheet DS1210.PDF ] | |
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