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PDF FLM3135-4F Data sheet ( Hoja de datos )

Número de pieza FLM3135-4F
Descripción C-Band Internally Matched FET
Fabricantes ETC 
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FLM3135-4F
FEATURES
• High Output Power: P1dB = 36.5dBm (Typ.)
• High Gain: G1dB = 12.0dB (Typ.)
• High PAE: ηadd = 38% (Typ.)
• Low IM3 = -45dBc@Po = 25.5dBm
• Broad Band: 3.1 ~ 3.5GHz
• Impedance Matched Zin/Zout = 50
• Hermetically Sealed Package
C-Band Internally Matched FET
DESCRIPTION
The FLM3135-4F is a power GaAs FET that is internally matched for
standard communication bands to provide optimum power and gain in a
50 ohm system.
Eudyna’s stringent Quality Assurance Program assures the highest
reliability and consistent performance.
ABSOLUTE MAXIMUM RATING (Ambient Temperature Ta=25°C)
Item
Symbol
Condition
Rating
Unit
Drain-Source Voltage
Gate-Source Voltage
VDS
VGS
15 V
-5 V
Total Power Dissipation
PT Tc = 25°C
25 W
Storage Temperature
Tstg
-65 to +175
Channel Temperature
Tch
175
Fujitsu recommends the following conditions for the reliable operation of GaAs FETs:
1. The drain-source operating voltage (VDS) should not exceed 10 volts.
2. The forward and reverse gate currents should not exceed 16.0 and -2.2 mA respectively with
gate resistance of 100.
ELECTRICAL CHARACTERISTICS (Ambient Temperature Ta=25°C)
Item
Saturated Drain Current
Transconductance
Symbol
IDSS
gm
Test Conditions
VDS = 5V, VGS = 0V
VDS = 5V, IDS = 1100mA
Min.
-
-
Limit
Typ. Max.
1950 2900
1000 -
Pinch-off Voltage
Vp VDS = 5V, IDS = 90mA -1.0 -2.0 -3.5
Gate Source Breakdown Voltage VGSO IGS = -90µA
-5.0 -
-
Output Power at 1dB G.C.P.
Power Gain at 1dB G.C.P.
Drain Current
Power-added Efficiency
P1dB
G1dB
Idsr
ηadd
VDS =10V,
IDS = 0.55 IDSS (Typ.),
f = 3.1 ~ 3.5 GHz,
ZS=ZL= 50 ohm
35.5 36.5 -
11.0 12.0 -
- 1100 1300
- 38 -
°C
°C
Unit
mA
mS
V
V
dBm
dB
mA
%
Gain Flatness
G
- - ±0.6
dB
3rd Order Intermodulation
Distortion
f = 3.5 GHz, f = 10 MHz
IM3 2-Tone Test
Pout = 25.5dBm S.C.L.
-42 -45
-
dBc
Thermal Resistance
Rth Channel to Case
- 5.0 6.0
°C/W
Channel Temperature Rise
CASE STYLE: IB
Tch
10V x Idsr x Rth
- - 80
°C
G.C.P.: Gain Compression Point, S.C.L.: Single Carrier Level
Edition 1.1
August 2004
1

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