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PDF FLM7179-18F Data sheet ( Hoja de datos )
| Número de pieza | FLM7179-18F | |
| Descripción | C-Band Internally Matched FET | |
| Fabricantes | ETC | |
| Logotipo |  |
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FLM7179-18F
FEATURES
C-Band Internally Matched FET
• High Output Power: P1dB = 42.5dBm (Typ.)
• High Gain: G1dB = 8.0dB (Typ.)
• High PAE: ηadd = 30% (Typ.)
• Low IM3 = -46dBc@Po = 32.0dBm
• Broad Band: 7.1 ~ 7.9GHz
• Impedance Matched Zin/Zout = 50Ω
• Hermetically Sealed Package
DESCRIPTION
The FLM7179-18F is a power GaAs FET that is internally matched for
standard communication bands to provide optimum power and gain in a
50 ohm system.
Eudyna’s stringent Quality Assurance Program assures the highest
reliability and consistent performance.
ABSOLUTE MAXIMUM RATING (Ambient Temperature Ta=25°C)
Item
Symbol
Condition
Rating
Unit
Drain-Source Voltage
VDS
15 V
Gate-Source Voltage
VGS
-5 V
Total Power Dissipation
PT Tc = 25°C
83.3 W
Storage Temperature
Tstg
-65 to +175
°C
Channel Temperature
Tch
175 °C
Fujitsu recommends the following conditions for the reliable operation of GaAs FETs:
1. The drain-source operating voltage (VDS) should not exceed 10 volts.
2. The forward and reverse gate currents should not exceed 48.0 and -8.4 mA respectively with
gate resistance of 25Ω.
ELECTRICAL CHARACTERISTICS (Ambient Temperature Ta=25°C)
Item
Symbol
Test Conditions
Min.
Limit
Typ. Max.
Unit
Saturated Drain Current
IDSS VDS = 5V, VGS = 0V
- 7.5 11.25
A
Transconductance
gm VDS = 5V, IDS = 4875mA -
7.5 -
S
Pinch-off Voltage
Vp VDS = 5V, IDS = 250mA -0.5 -1.5 -3.0
V
Gate Source Breakdown Voltage VGSO IGS = -250µA
Output Power at 1dB G.C.P.
P1dB
-5.0 -
42.0 42.5
-
-
V
dBm
Power Gain at 1dB G.C.P.
Drain Current
Power-added Efficiency
G1dB
Idsr
ηadd
VDS =10V,
IDS = 0.65 IDSS (Typ.),
f = 7.1 ~7.9 GHz,
ZS=ZL= 50 ohm
7.0 8.0 -
- 4875 6000
- 30 -
dB
mA
%
Gain Flatness
∆G
- - ±0.6
dB
3rd Order Intermodulation
Distortion
f =7.9 GHz, ∆f = 10 MHz
IM3 2-Tone Test
Pout = 32.0dBm S.C.L.
-44 -46
-
dBc
Thermal Resistance
Rth Channel to Case
- 1.6 1.8
°C/W
Channel Temperature Rise
CASE STYLE: IK
∆Tch
10V x Idsr x Rth
- - 80
°C
G.C.P.: Gain Compression Point, S.C.L.: Single Carrier Level
Edition 1.3
August 2004
1
1 page | ||
| Páginas | Total 4 Páginas | |
| PDF Descargar | [ Datasheet FLM7179-18F.PDF ] | |
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