PDF FLM8596-15F Data sheet ( Hoja de datos )

Número de pieza	FLM8596-15F
Descripción	X-Band Internally Matched FET
Fabricantes	ETC
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No Preview Available ! FLM8596-15F FEATURES ・High Output Power: P1dB=42.0dBm(Typ.) ・High Gain: G1dB=7.5dB(Typ.) ・High PAE: ηadd=32%(Typ.) ・Broad Band: 8.5~9.6GHz ・Impedance Matched Zin/Zout = 50Ω ・Hermetically Sealed Package X-Band Internally Matched FET DESCRIPTION The FLM8596-15F is a power GaAs FET that is internally matched for standard communication bands to provide optimum power and gain in a 50Ω system. ABSOLUTE MAXIMUM RATINGS (Case Temperature Tc=25OC) Item Symbol Rating Drain-Source Voltage VDS 15 Gate-Source Voltage VGS -5 Total Power Dissipation PT 57.7 Storage Temperature Tstg -65 to +175 Channel Temperature Tch 175 Unit V V W oC oC Recommended Operating Condition(Case Temperature Tc=25OC) Item Symbol Condition DC Input Voltage VDS Gate Current IGS RG=50Ω Gate Current IGR RG=50Ω Limit ≤10 ≤16.7 ≥-3.62 Unit V mA mA ELECTRICAL CHARACTERISTICS (Case Temperature Tc=25OC) Item Drain Current Transconductance Pinch-off Voltage Gate-Source Breakdown Voltage Output Power at 1dB G.C.P. Symbol IDSS gm Vp VGSO P1dB Test Conditions VDS=5V, VGS=0V VDS=5V, IDS=2.4A VDS=5V, IDS=240mA IGS=-300µA Min. - - -0.5 -5.0 41.0 Limit Typ. 7.2 4500 -1.5 - 42.0 Max. 10.8 - -3.0 - - Unit A mS V V dBm Power Gain at 1dB G.C.P. Drain Current Power-added Efficiency Gain Flatness G1dB Idsr ηadd ∆G VDS=10V f=8.5 - 9.6 GHz IDS=0.5Idss Zs=ZL=50Ω 6.5 7.5 - - 4.0 5.0 - 32 - - - 1.2 dB A % dB Thermal Resistance Channel Temperature Rise CASE STYLE: IB Rth ∆Tch Channel to Case 10V X Idsr X Rth - 2.3 2.6 oC/W - - 100 oC G.C.P.:Gain Compression Point ESD Class Ⅲ 2000V　~ Note : Based on EIAJ ED-4701 C-111A(C=100pF, R=1.5kΩ) Edition 1.2 September 2004 1 1 page FLM8596-15F X-Band Internally Matched FET For further information please contact : CAUTION Eudyna Devices USA Inc. 2355 Zanker Rd. San Jose, CA 95131-1138, U.S.A. TEL: (408) 232-9500 FAX: (408) 428-9111 www.us.eudyna.com Eudyna Devices Europe Ltd. Network House Norreys Drive Maidenhead, Berkshire SL6 4FJ United Kingdom TEL: +44 (0) 1628 504800 FAX: +44 (0) 1628 504888 Eudyna Devices Asia Pte. Ltd. Hong Kong Branch Rm.1101,Ocean Centre, 5 Canton Road Tsim Sha Tsui, Kowloon, Hong Kong TEL: +852-2377-0227 FAX: +852-2377-3921 Eudyna Devices Inc. products contain gallium arsenide (GaAs) which can be hazardous to the human body and the environment. For safety, observe the following procedures: ・Do not put these products into the mouth. ・Do not alter the form of this product into a gas, powder, or liquid through burning, crushing, or chemical processing as these by- products are dangerous to the human body if inhaled, ingested, or swallowed. ・Observe government laws and company regulations when discarding this product. This product must be discarded in accordance with methods specified by applicable hazardous waste procedures. Eudyna Devices Inc. reserves the right to change products and specifications without notice.The information does not convey any license under rights of Eudyna Devices Inc. or others. © 2004 Eudyna Devices USA Inc. Printed in U.S.A. Eudyna Devices Inc. Sales Division 1, Kanai-cho, Sakae-ku Yokohama, 244-0845, Japan TEL +81-45-853-8156 FAX +81-45-853-8170 5 5 Page

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