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Número de pieza | 17N80C2 | |
Descripción | SPP17N80C2 | |
Fabricantes | Infineon Technologies | |
Logotipo | ||
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Preliminary data
SPP17N80C2
SPB17N80C2
Cool MOS™ Power Transistor
COOLMOS
Feature
Power Semiconductors
· New revolutionary high voltage technology
Product Summary
· Worldwide best RDS(on) in TO 220
· Ultra low gate charge
VDS 800 V
WRDS(on) 290 m
· Periodic avalanche rated
· Extreme dv/dt rated
m· Ultra low effective capacitances
o· Improved noise immunity
ID
P-TO263-3-2
17 A
P-TO220-3-1
t4U.cType
SPP17N80C2
eSPB17N80C2
Package
P-TO220-3-1
P-TO263-3-2
Ordering Code
Q67040-S4353
Q67040-S4354
Marking
SPP17N80C2
SPB17N80C2
heMaximum Ratings, at Tj = 25 °C, unless otherwise specified
SParameter
Symbol
taContinuous drain current
aTC = 25 °C
TC = 100 °C
ID
.DPulsed drain current, tp limited by Tjmax
wAvalanche energy, single pulse
ID=4A, VDD=50V
ID puls
EAS
wwAvalanche energy, repetitive tAR limited by Tjmax1)
EAR
Value
17
11
51
670
0.5
Unit
A
mJ
ID=17A, VDD=50V
Avalanche current, repetitive tAR limited by Tjmax
IAR
17 A
Reverse diode dv/dt
dv/dt
6 V/ns
IS=17A, VDS < VDD, di/dt=100A/µs, Tjmax=150°C
Gate source voltage
Power dissipation
TC = 25 °C
Operating and storage temperature
Page 1
VGS
Ptot
Tj , Tstg
±20 V
-55.2..0+8w15w0w.2D0a0t0a-W°0SC5h-2e9et4U.com
1 page www.DataSheet4U.com
Preliminary data
SPP17N80C2
SPB17N80C2
1 Power dissipation
Ptot = f (TC)
SPP17N80C2
240
W
200
180
2 Drain current
ID = f (TC)
parameter: VGS³ 10 V
SPP17N80C2
18
A
14
160 12
140
10
120
8
100
80 6
60
4
40
2
20
0
0 20 40 60 80 100 120 °C 160
TC
0
0 20 40 60 80 100 120 °C 160
TC
3 Safe operating area
ID = f ( VDS )
parameter : D = 0 , TC=25°C
10 2 SPP17N80C2
A
tp = 6.7µs
10 µs
4 Transient thermal impedance
ZthJC = f (tp)
parameter : D = tp/T
10 1 SPP17N80C2
K/W
10 0
10 1
10 -1
100 µs
10 -2
D = 0.50
0.20
10 0
1 ms
10 -3
0.10
0.05
10 ms
DC
10 -4
single pulse
0.02
0.01
10
-1
10
0
10 1
10 2 V 10 3
10
-5
10
-7
10 -6
10 -5
10 -4
10 -3
10 -2
s 10 0
VDS
tp
Page 5
2000-05-29
5 Page www.DataSheet4U.com
Preliminary data
SPP17N80C2
SPB17N80C2
Published by
Infineon Technologies AG,
Bereichs Kommunikation
St.-Martin-Strasse 53,
D-81541 München
© Infineon Technologies AG 1999
All Rights Reserved.
Attention please!
The information herein is given to describe certain components and shall not be considered as warranted
characteristics.
Terms of delivery and rights to technical change reserved.
We hereby disclaim any and all warranties, including but not limited to warranties of non-infringement,
regarding circuits, descriptions and charts stated herein.
Infineon Technologies is an approved CECC manufacturer.
Information
For further information on technology, delivery terms and conditions and prices please contact your nearest
Infineon Technologies Office in Germany or our Infineon Technologies Reprensatives worldwide (see address list).
Warnings
Due to technical requirements components may contain dangerous substances.
For information on the types in question please contact your nearest Infineon Technologies Office.
Infineon Technologies Components may only be used in life-support devices or systems with the express
written approval of Infineon Technologies, if a failure of such components can reasonably be expected to
cause the failure of that life-support device or system, or to affect the safety or effectiveness of that device
or system Life support devices or systems are intended to be implanted in the human body, or to support
and/or maintain and sustain and/or protect human life. If they fail, it is reasonable to assume that the health
of the user or other persons may be endangered.
Page 11
2000-05-29
11 Page |
Páginas | Total 11 Páginas | |
PDF Descargar | [ Datasheet 17N80C2.PDF ] |
Número de pieza | Descripción | Fabricantes |
17N80C2 | SPP17N80C2 | Infineon Technologies |
17N80C2 | SPP17N80C2 | Infineon Technologies |
17N80C3 | SPP17N80C3 | Infineon Technologies |
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