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PDF 2N3819 Data sheet ( Hoja de datos )
| Número de pieza | 2N3819 | |
| Descripción | JFET VHF/UHF Amplifier N-Channel-Depletion | |
| Fabricantes | ON Semiconductor | |
| Logotipo |  |
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Hay una vista previa y un enlace de descarga de 2N3819 (archivo pdf) en la parte inferior de esta página. Total 8 Páginas | ||
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2N3819
JFET VHF/UHF Amplifier
N–Channel – Depletion
MAXIMUM RATINGS
Rating
Drain–Source Voltage
Drain–Gate Voltage
Gate–Source Voltage
Drain Current
Forward Gate Current
Total Device Dissipation
@ TA = 25°C
Derate above 25°C
Storage Channel Temperature Range
Symbol
VDS
VDG
VGS
ID
IG(f)
PD
Tstg
Value
25
25
25
100
10
Unit
Vdc
Vdc
Vdc
mAdc
mAdc
350
2.8
–65 to +150
mW
mW/°C
°C
http://onsemi.com
3 DRAIN
2
GATE
1 SOURCE
1
2
3
TO–92
CASE 29
STYLE 22
MARKING DIAGRAM
2N
3819
YWW
2N3819 = Device Code
Y = Year
WW = Work Week
ORDERING INFORMATION
Device
Package
Shipping
2N3819
TO–92
5000 Units/Box
© Semiconductor Components Industries, LLC, 2002
March, 2002 – Rev. 0
1
Publication Order Number:
2N3819/D
1 page  
2N3819
COMMON GATE CHARACTERISTICS
ADMITTANCE PARAMETERS
(VDG = 15 Vdc, Tchannel = 25°C)
20
10
7.0 gig @ IDSS
5.0
3.0 grg @ 0.25 IDSS
2.0
1.0
0.7
0.5
0.3
0.2
10
big @ IDSS
20 30
big @ 0.25 IDSS
50 70 100 200 300 500 700 1000
f, FREQUENCY (MHz)
Figure 9. Input Admittance (yig)
0.5
0.3
0.2 brg @ IDSS
0.1
0.07
0.05
0.03 0.25 IDSS
0.02
0.01
0.007
0.005
10
gig @ IDSS, 0.25 IDSS
20 30
50 70 100 200 300 500 700 1000
f, FREQUENCY (MHz)
Figure 10. Reverse Transfer Admittance (yrg)
10
7.0 gfg @ IDSS
5.0
3.0 gfg @ 0.25 IDSS
2.0
1.0
0.7
0.5
0.3 bfg @ IDSS
0.2 brg @ 0.25 IDSS
0.1
10
20 30 50 70 100
200 300 500 700 1000
f, FREQUENCY (MHz)
Figure 11. Forward Transfer Admittance (yfg)
1.0
0.7 bog @ IDSS, 0.25 IDSS
0.5
0.3
0.2
0.1
0.07
0.05
0.03
0.02
0.01
10
gog @ IDSS
gog @ 0.25 IDSS
20 30 50 70 100
200 300 500 700 1000
f, FREQUENCY (MHz)
Figure 12. Output Admittance (yog)
http://onsemi.com
5
5 Page | ||
| Páginas | Total 8 Páginas | |
| PDF Descargar | [ Datasheet 2N3819.PDF ] | |
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