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PDF IRFL4315 Data sheet ( Hoja de datos )
| Número de pieza | IRFL4315 | |
| Descripción | SMPS MOSFET | |
| Fabricantes | International Rectifier | |
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SMPS MOSFET
Applications
l High frequency DC-DC converters
VDSS
150V
PD - 94445
IRFL4315
HEXFET® Power MOSFET
RDS(on) max
ID
185mΩ@VGS = 10V 2.6A
Benefits
l Low Gate to Drain Charge to Reduce
Switching Losses
l Fully Characterized Capacitance Including
Effective COSS to Simplify Design, (See
App. Note AN1001)
l Fully Characterized Avalanche Voltage
and Current
S O T -2 2 3
Absolute Maximum Ratings
ID @ TA = 25°C
ID @ TA = 70°C
IDM
PD @TA = 25°C
VGS
dv/dt
TJ
TSTG
Parameter
Continuous Drain Current, VGS @ 10V
Continuous Drain Current, VGS @ 10V
Pulsed Drain Current
Power Dissipation
Linear Derating Factor
Gate-to-Source Voltage
Peak Diode Recovery dv/dt
Operating Junction and
Storage Temperature Range
Soldering Temperature, for 10 seconds
Max.
2.6
2.1
21
2.8
0.02
± 30
6.3
-55 to + 150
300 (1.6mm from case )
Units
A
W
W/°C
V
V/ns
°C
Thermal Resistance
Symbol
RθJA
Parameter
Junction-to-Ambient (PCB Mount, steady state)
Typ.
–––
Notes through are on page 8
www.irf.com
Max.
45
Units
°C/W
1
06/14/02
1 page  
IRFL4315
3.0
2.5
2.0
1.5
1.0
0.5
0.0
25
50 75 100 125
TA , Ambient Tempe°rature (°C)
150
Fig 9. Maximum Drain Current Vs.
Ambient Temperature
100
VDS
VGS
RG
RD
D.U.T.
10V
Pulse Width ≤ 1 µs
Duty Factor ≤ 0.1 %
+-VDD
Fig 10a. Switching Time Test Circuit
VDS
90%
10%
VGS
td(on) tr
td(off) tf
Fig 10b. Switching Time Waveforms
D = 0.50
10 0.20
0.10
0.05
1 0.02
0.01
0.1
0.00001
SINGLE PULSE
(THERMAL RESPONSE)
0.0001
0.001
PDM
t1
t2
Notes:
1. Duty factor D =
t1 / t 2
2. Peak T J = P DM x Z thJA + T A
0.01 0.1
t1, Rectangular Pulse Duration (sec)
1
10 100
Fig 11. Maximum Effective Transient Thermal Impedance, Junction-to-Case
www.irf.com
5
5 Page | ||
| Páginas | Total 8 Páginas | |
| PDF Descargar | [ Datasheet IRFL4315.PDF ] | |
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