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PDF IRFL014N Data sheet ( Hoja de datos )

Número de pieza IRFL014N
Descripción Power MOSFET ( Transistor )
Fabricantes International Rectifier 
Logotipo International Rectifier Logotipo



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No Preview Available ! IRFL014N Hoja de datos, Descripción, Manual

PD- 92003A
IRFL014N
HEXFET® Power MOSFET
l Surface Mount
l Advanced Process Technology
l Ultra Low On-Resistance
l Dynamic dv/dt Rating
l Fast Switching
l Fully Avalanche Rated
Description
Fifth Generation HEXFET® MOSFETs from International
Rectifier utilize advanced processing techniques to achieve
extremely low on-resistance per silicon area. This benefit,
combined with the fast switching speed and ruggedized
device design that HEXFET® power MOSFETs are well
known for, provides the designer with an extremely efficient
and reliable device for use in a wide variety of applications.
G
D
VDSS = 55V
RDS(on) = 0.16
ID = 1.9A
S
The SOT-223 package is designed for surface-mount
using vapor phase, infrared, or wave soldering techniques.
Its unique package design allows for easy automatic pick-
and-place as with other SOT or SOIC packages but has
the added advantage of improved thermal performance
due to an enlarged tab for heatsinking. Power dissipation
of 1.0W is possible in a typical surface mount application.
SOT-223
Absolute Maximum Ratings
Parameter
ID @ TA = 25°C
ID @ TA = 25°C
ID @ TA = 70°C
IDM
PD @TA = 25°C
PD @TA = 25°C
Continuous Drain Current, VGS @ 10V**
Continuous Drain Current, VGS @ 10V*
Continuous Drain Current, VGS @ 10V*
Pulsed Drain Current 
Power Dissipation (PCB Mount)**
Power Dissipation (PCB Mount)*
Linear Derating Factor (PCB Mount)*
VGS
EAS
IAR
EAR
dv/dt
Gate-to-Source Voltage
Single Pulse Avalanche Energy‚
Avalanche Current
Repetitive Avalanche Energy*
Peak Diode Recovery dv/dt ƒ
TJ, TSTG
Junction and Storage Temperature Range
Thermal Resistance
Max.
2.7
1.9
1.5
15
2.1
1.0
8.3
± 20
48
1.7
0.1
5.0
-55 to + 150
Parameter
Typ.
Max.
RθJA
RθJA
Junction-to-Amb. (PCB Mount, steady state)*
Junction-to-Amb. (PCB Mount, steady state)**
90
50
120
60
* When mounted on FR-4 board using minimum recommended footprint.
** When mounted on 1 inch square copper board, for comparison with other SMD devices.
www.irf.com
Units
A
W
W
mW/°C
V
mJ
A
mJ
V/ns
°C
Units
°C/W
1
1/19/00

1 page




IRFL014N pdf
10V QGS
VG
QG
QGD
Charge
Fig 9a. Basic Gate Charge Waveform
Current Regulator
Same Type as D.U.T.
50K
12V .2µF
.3µF
D.U.T.
+
-VDS
VGS
3mA
IG ID
Current Sampling Resistors
Fig 9b. Gate Charge Test Circuit
1000
IRFL014N
VDS
VGS
RG
RD
D.U.T.
10V
Pulse Width ≤ 1 µs
Duty Factor ≤ 0.1 %
+
-
VDD
Fig 10a. Switching Time Test Circuit
VDS
90%
10%
VGS
td(on) tr
td(off) tf
Fig 10b. Switching Time Waveforms
100
D = 0.50
0.20
0.10
10
0 .05
0 .02
0 .01
1
0.1
0.00001
SINGLE PULSE
(THERMAL RESPONSE)
0.0001
0.001
PD M
N otes:
1. Duty factor D = t1 / t 2
t1
t2
2. Peak TJ = PDM x Z thJA + T A
0.01 0.1
1
10 100
t1 , Rectangular Pulse Duration (sec)
Fig 11. Maximum Effective Transient Thermal Impedance, Junction-to-Ambient
www.irf.com
A
1000
5

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