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PDF MAS3132E Data sheet ( Hoja de datos )
| Número de pieza | MAS3132E | |
| Descripción | Switching Diodes | |
| Fabricantes | Panasonic Semiconductor | |
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Switching Diodes
MAS3132E
Silicon epitaxial planar type
For high-speed switching circuits
■ Features
• Two elements are contained in one package, allowing high-
density mounting
• Short reverse recovery time trr
• Small terminal capacitance Ct
■ Absolute Maximum Ratings Ta = 25°C
Parameter
Symbol Rating
Reverse voltage
Maximum peak reverse voltage
Forward current
Single
Double
VR
VRM
IF
80
80
100
150
Peak forward current Single
Double
IFM
225
340
Non-repetitive peak Single
forward surge current * Double
IFSM
500
750
Junction temperature
Storage temperature
Note) *: t = 1 s
Tj 150
Tstg −55 to +150
Unit
V
V
mA
mA
mA
°C
°C
0.33+–00..0025
3
0.23+–00..0025
12
(0.40) (0.40)
0.80±0.05
1.20±0.05
5˚
Unit: mm
0.10+–00..0025
1: Anode 1
2: Anode 2
3: Cathode 1, 2
SSSMini3-F1 Package
Marking Symbol: MU
Internal Connection
3
12
■ Electrical Characteristics Ta = 25°C ± 3°C
Parameter
Symbol
Conditions
Min Typ Max Unit
Forward voltage
Reverse voltage
Reverse current
Terminal capacitance
Reverse recovery time *
VF IF = 100 mA
VR IR = 100 µA
IR VR = 75 V
Ct VR = 0 V, f = 1 MHz
trr IF = 10 mA, VR = 6 V
Irr = 0.1 IR , RL = 100 Ω
1.2 V
80 V
100 nA
2 pF
3 ns
Note) 1. Measuring methods are based on JAPANESE INDUSTRIAL STANDARD JIS C 7031 measuring method for diodes.
2. Absolute frequency of input and output is 100 MHz.
3. *: trr measurement circuit
Bias Application Unit N-50BU
Input Pulse
Output Pulse
A
Pulse Generator
(PG-10N)
Rs = 50 Ω
Wave Form Analyzer
(SAS-8130)
Ri = 50 Ω
tr tp
10%
t
VR 90%
tp = 2 µs
tr = 0.35 ns
δ = 0.05
IF
trr
t
Irr = 0.1 IR
IF = 10 mA
VR = 6 V
RL = 100 Ω
Publication date: November 2003
SKF00065BED
1
1 page | ||
| Páginas | Total 3 Páginas | |
| PDF Descargar | [ Datasheet MAS3132E.PDF ] | |
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