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PDF GM71VS16400CL Data sheet ( Hoja de datos )

Número de pieza GM71VS16400CL
Descripción (GM71VS16400CL / GM71V16400C) 4M x 4-Bit CMOS DRAM
Fabricantes Hynix Semiconductor 
Logotipo Hynix Semiconductor Logotipo



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No Preview Available ! GM71VS16400CL Hoja de datos, Descripción, Manual

GM71V16400C
GM71VS16400CL
4,194,304 WORDS x 4 BIT
CMOS DYNAMIC RAM
Description
The GM71V(S)16400C/CL is the new
generation dynamic RAM organized 4,194,304
words x 4 bit. GM71V(S)16400C/CL has
realized higher density, higher performance and
various functions by utilizing advanced CMOS
process technology. The GM71V(S)16400C/CL
offers Fast Page Mode as a high speed access
mode. Multiplexed address inputs permit the
GM71V(S)16400C/CL to be packaged in a
standard 300 mil 24(26) pin SOJ, and a standard
300 mil 24(26) pin plastic TSOP II. The
package size provides high system bit densities
and is compatible with widely available
automated testing and insertion equipment.
System oriented features include single power
supply 3.3V+/-0.3V tolerance, direct interfacing
capability with high performance logic families
such as Schottky TTL.
Pin Configuration
Features
* 4,194,304 Words x 4 Bit Organization
* Fast Page Mode Capability
* Single Power Supply (3.3V+/-0.3V)
* Fast Access Time & Cycle Time
(Unit: ns)
t tRAC CAC tRC tPC
GM71V(S)16400C/CL-5
GM71V(S)16400C/CL-6
GM71V(S)16400C/CL-7
50 13 90 35
60 15 110 40
70 18 130 45
* Low Power
Active : 324/288/252mW (MAX)
Standby : 7.2mW (CMOS level : MAX)
: 0.36mW (L-version : MAX)
* RAS Only Refresh, CAS before RAS Refresh,
Hidden Refresh Capability
* All inputs and outputs TTL Compatible
* 4096 Refresh Cycles/64ms
* 4096 Refresh Cycles/128ms (L-version)
* Self Refresh Operation (L-version)
* Battery backup operation (L-version)
* Test function : 16bit parallel test mode
24(26) SOJ
24(26) TSOP II
VCC 1
I/O1 2
I/O2 3
WE 4
RAS 5
A11 6
A10 8
A0 9
A1 10
mA2 11
oA3 12
.cVCC 13
www.datasheet4uRev 0.1 / Apr’01
26 VSS
25 I/O4
24 I/O3
23 CAS
22 OE
21 A9
VCC 1
I/O1 2
I/O2 3
WE 4
RAS 5
A11 6
19 A8
18 A7
17 A6
16 A5
15 A4
14 VSS
A10 8
A0 9
A1 10
A2 11
A3 12
VCC 13
(Top View)
26 VSS
25 I/O4
24 I/O3
23 CAS
22 OE
21 A9
19 A8
18 A7
17 A6
16 A5
15 A4
14 VSS

1 page




GM71VS16400CL pdf
Read Cycle
Symbol
tRAC Access Time from RAS
tCAC Access Time from CAS
tAA Access Time from Address
tOAC Access Time from OE
tRCS Read Command Setup Time
tRCH Read Command Hold Time to CAS
tRRH Read Command Hold Time to RAS
tRAL Column Address to RAS Lead Time
tCAL Column Address to CAS Lead Time
tCLZ CAS to Output in low-Z
tOH Output Data Hold Time
tOHO Output Data Hold Time from OE
tOEZ Output Buffer Turn-off Time to OE
tOFF Output Buffer Turn-off Time
tCDD CAS to DIN Delay Time
GM71V16400C
GM71V(S)16400 GM71V(S)16400 GM71V(S)16400
C/CL-5
C/CL-6
C/CL-7
Min Max Min Max Min
- 50 - 60 - 70
- 13 - 15 - 18
- 25 - 30 - 35
- 13 - 15 - 18
Unit
ns
ns
ns
ns
Note
9,10,21
10,11,
18,21
10,12,
18,21
10
0- 0 - 0-
ns
0- 0 - 0-
ns
13
5- 5 - 5-
ns
13
25 - 30 - 35 -
ns
25 - 30 - 35 -
ns
0- 0 - 0-
ns
3- 3 - 3-
ns
3- 3 - 3-
ns
- 13 - 15 - 15 ns
14
- 13 - 15 - 15 ns
14
13 - 15 - 18 -
ns
6
Write Cycle
Symbol
Parameter
tWCS
tWCH
tWP
tRWL
tCWL
tDS
tDH
Write Command Setup Time
Write Command Hold Time
Write Command Pulse Width
Write Command to RAS Lead Time
Write Command to CAS Lead Time
Data-in Setup Time
Data-in Hold Time
GM71V(S)16400 GM71V(S)16400 GM71V(S)16400
C/CL-5
C/CL-6
C/CL-7
Min Max Min Max Min Max
Unit
0-
0-
0-
ns
8 - 10 - 15 -
ns
8 - 10 - 10 -
ns
13 - 15 - 18 -
ns
13 - 15 - 18 -
ns
0- 0- 0-
ns
8 - 10 - 15 -
ns
Note
15
16
16
Rev 0.1 / Apr’

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