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PDF K3053 Data sheet ( Hoja de datos )

Número de pieza K3053
Descripción MOSFET ( Transistor ) - 2SK3053
Fabricantes NEC 
Logotipo NEC Logotipo



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No Preview Available ! K3053 Hoja de datos, Descripción, Manual

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DATA SHEET
MOS FIELD EFFECT TRANSISTOR
2SK3053
SWITCHING
N-CHANNEL POWER MOS FET
INDUSTRIAL USE
DESCRIPTION
The 2SK3053 is N-Channel MOS Field Effect Transistor
designed for high current switching applications in consumer
instruments.
ORDERING INFORMATION
PART NUMBER
PACKAGE
2SK3053
Isolated TO-220
FEATURES
Low On-State Resistance
RDS(on)1 = 45 mMAX. (VGS = 10 V, ID = 13 A)
RDS(on)2 = 70 mMAX. (VGS = 4.0 V, ID = 13 A)
Low Ciss : Ciss = 790 pF TYP.
Built-in Gate Protection Diode
Isolated TO-220 package
(Isolated TO-220)
ABSOLUTE MAXIMUM RATINGS (TA = 25 °C)
Drain to Source Voltage
VDSS
Gate to Source Voltage
VGSS(AC)
Gate to Source Voltage
VGSS(DC)
Drain Current (DC)
Drain Current (Pulse) Note1
ID(DC)
ID(pulse)
Total Power Dissipation (TC = 25°C)
PT
Total Power Dissipation (TA = 25°C)
PT
Channel Temperature
Tch
Storage Temperature
Single Avalanche Current Note2
Single Avalanche Energy Note2
Tstg
IAS
EAS
60
±20
+20, 10
±25
±75
30
2.0
150
–55 to +150
12.5
15.6
V
V
V
A
A
W
W
°C
°C
A
mJ
Notes 1. PW 10 µs, Duty cycle 1 %
! 2. Starting Tch = 25 °C, VDD = 30 V, RG = 25 Ω, VGS = 20 V 0 V
The information in this document is subject to change without notice. Before using this document, please
confirm that this is the latest version.
Not all devices/types available in every country. Please check with local NEC representative for
availability and additional information.
Document No. D12912EJ3V0DS00 (3rd edition)
Date Published May 2001 NS CP(K)
Printed in Japan
The mark ! shows major revised points.
©
1999, 2000

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K3053 pdf
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DRAIN TO SOURCE ON-STATE RESISTANCE vs.
CHANNEL TEMPERATURE
80
VGS = 4.0 V
60
40 10 V
20
ID = 13 A
0 Pulsed
50 0 50 100 150
Tch - Channel Temperature - ˚C
10000
CAPACITANCE vs. DRAIN TO
SOURCE VOLTAGE
VGS = 0 V
f = 1 MHz
1000
Ciss
Coss
100
Crss
10
0.1
1 10
VDS - Drain to Source Voltage - V
100
1000
REVERSE RECOVERY TIME vs.
DRAIN CURRENT
di/dt = 100 A/µs
VGS = 0 V
100
10
1
0.1 1.0 10 100
IF - Drain Current - A
2SK3053
SOURCE TO DRAIN DIODE
FORWARD VOLTAGE
1000 Pulsed
100
VGS = 10 V
10 VGS = 0 V
1
0.10 0.5 1.0
VSD - Source to Drain Voltage - V
1.5
1000
SWITCHING CHARACTERISTICS
tr
100
10
td(off)
tf
td(on)
1
0.1 1
10 100
ID - Drain Current - A
DYNAMIC INPUT/OUTPUT CHARACTERISTICS
80 16
60 VDD = 48 V
30 V
12 V
40
VGS
12
8
20 4
VDS ID = 25 A
0
0 4 8 12 16 20 24 28 32
QG - Gate Charge - nC
Data Sheet D12912EJ3V0DS
5

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