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Número de pieza | IRL7833L | |
Descripción | (IRL7833x) HEXFET Power MOSFET | |
Fabricantes | International Rectifier | |
Logotipo | ||
Hay una vista previa y un enlace de descarga de IRL7833L (archivo pdf) en la parte inferior de esta página. Total 12 Páginas | ||
No Preview Available ! Applications
l High Frequency Synchronous Buck
Converters for Computer Processor Power
l High Frequency Isolated DC-DC
Converters with Synchronous Rectification
for Telecom and Consumer Use
Benefits
l Very Low RDS(on) at 4.5V VGS
l Ultra-Low Gate Impedance
l Fully Characterized Avalanche Voltage
and Current
PD - 94668B
IRL7833
IRL7833S
IRL7833L
HEXFET® Power MOSFET
VDSS RDS(on) max Qg
:30V 3.8m
32nC
TO-220AB
IRL7833
D2Pak
IRL7833S
TO-262
IRL7833L
Absolute Maximum Ratings
Parameter
VDS Drain-to-Source Voltage
VGS
ID @ TC = 25°C
ID @ TC = 100°C
IDM
PD @TC = 25°C
PD @TC = 100°C
Gate-to-Source Voltage
Continuous Drain Current, VGS @ 10V
Continuous Drain Current, VGS @ 10V
Pulsed Drain Current
gMaximum Power Dissipation
gMaximum Power Dissipation
TJ
TSTG
Linear Derating Factor
Operating Junction and
Storage Temperature Range
Mounting Torque, 6-32 or M3 screw
Thermal Resistance
Parameter
RθJC
RθCS
RθJA
RθJA
Junction-to-Case
hCase-to-Sink, Flat, Greased Surface
hJunction-to-Ambient
gÃJunction-to-Ambient (PCB Mount)
Notes through are on page 12
www.irf.com
Max.
30
± 20
150f
110f
600
140
72
0.96
-55 to + 175
y y10 lbf in (1.1N m)
Typ.
–––
0.50
–––
–––
Max.
1.04
–––
62
40
Units
V
A
W
W/°C
°C
Units
°C/W
1
4/22/04
1 page IRL7833/S/L
160
LIMITED BY PACKAGE
120
80
40
0
25 50 75 100 125 150 175
TC, Case Temperature (°C)
Fig 9. Maximum Drain Current Vs.
Case Temperature
2.5
2.0
1.5
ID = 250µA
1.0
0.5
0.0
-75 -50 -25 0 25 50 75 100 125 150 175
TJ , Temperature ( °C )
Fig 10. Threshold Voltage Vs. Temperature
10
1
D = 0.50
0.20
0.10
0.1
0.05
0.02
0.01
0.01
0.00001
SINGLE PULSE
(THERMAL RESPONSE)
0.0001
0.001
0.01
t1, Rectangular Pulse Duration (sec)
P DM
t1
t2
Notes:
1. Duty factor D =
t1/ t 2
2. Peak T J = P DM x Z thJC + T C
0.1
Fig 11. Maximum Effective Transient Thermal Impedance, Junction-to-Case
www.irf.com
1
5
5 Page TO-262 Package Outline
IRL7833/S/L
TO-262 Part Marking Information
www.irf.com
11
11 Page |
Páginas | Total 12 Páginas | |
PDF Descargar | [ Datasheet IRL7833L.PDF ] |
Número de pieza | Descripción | Fabricantes |
IRL7833 | (IRL7833x) HEXFET Power MOSFET | International Rectifier |
IRL7833L | (IRL7833x) HEXFET Power MOSFET | International Rectifier |
IRL7833LPbF | Power MOSFET ( Transistor ) | International Rectifier |
IRL7833PbF | Power MOSFET ( Transistor ) | International Rectifier |
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