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PDF IRG4IBC30W Data sheet ( Hoja de datos )
| Número de pieza | IRG4IBC30W | |
| Descripción | INSULATED GATE BIPOLAR TRANSISTOR | |
| Fabricantes | International Rectifier | |
| Logotipo |  |
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Hay una vista previa y un enlace de descarga de IRG4IBC30W (archivo pdf) en la parte inferior de esta página. Total 8 Páginas | ||
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PD 91791A
IRG4IBC30W
INSULATED GATE BIPOLAR TRANSISTOR
Features
• Designed expressly for Switch-Mode Power
Supply and PFC (power factor correction)
applications
• 2.5kV, 60s insulation voltage V
• Industry-benchmark switching losses improve
efficiency of all power supply topologies
• 50% reduction of Eoff parameter
• Low IGBT conduction losses
• Latest-generation IGBT design and construction offers
tighter parameters distribution, exceptional reliability
• Industry standard Isolated TO-220 FullpakTM
outline
Benefits
• Lower switching losses allow more cost-effective
operation than power MOSFETs up to 150 kHz
("hard switched" mode)
• Of particular benefit to single-ended converters and
boost PFC topologies 150W and higher
• Low conduction losses and minimal minority-carrier
recombination make these an excellent option for
resonant mode switching as well (up to >>300 kHz)
Absolute Maximum Ratings
Parameter
VCES
IC @ TC = 25°C
IC @ TC = 100°C
ICM
ILM
VGE
EARV
PD @ TC = 25°C
PD @ TC = 100°C
TJ
TSTG
Collector-to-Emitter Breakdown Voltage
Continuous Collector Current
Continuous Collector Current
Pulsed Collector Current Q
Clamped Inductive Load Current R
Gate-to-Emitter Voltage
Reverse Voltage Avalanche Energy S
Maximum Power Dissipation
Maximum Power Dissipation
Operating Junction and
Storage Temperature Range
Soldering Temperature, for 10 seconds
Mounting torque, 6-32 or M3 screw.
C
G
E
n-channel
VCES = 600V
VCE(on) typ. = 2.1V
@VGE = 15V, IC = 12 A
TO-220 FULLPAK
Max.
600
17
8.4
92
92
± 20
180
45
18
-55 to + 150
300 (0.063 in. (1.6mm from case )
10 lbf•in (1.1N•m)
Units
V
A
V
mJ
W
°C
Thermal Resistance
RθJC
RθJA
Wt
Parameter
Junction-to-Case - IGBT
Junction-to-Ambient, typical socket mount
Weight
Typ.
–––
–––
2.0 (0.07)
Max.
2.8
65
–––
Units
°C/W
g (oz)
www.irf.com
1
12/30/00
1 page  
IRG4IBC30W
2000
1500
1000
VGE = 0V, f = 1MHz
Cies = Cge + Cgc , Cce SHORTED
Cres = Cgc
Coes = Cce + Cgc
Cies
500
0
1
Coes
Cres
10 100
VCE , Collector-to-Emitter Voltage (V)
Fig. 7 - Typical Capacitance vs.
Collector-to-Emitter Voltage
20
VCC = 400V
I C = 12A
16
12
8
4
0
0 10 20 30 40 50 60
QG , Total Gate Charge (nC)
Fig. 8 - Typical Gate Charge vs.
Gate-to-Emitter Voltage
0.5
VCC = 480V
VGE = 15V
TJ = 25 ° C
0.4 IC = 12A
0.3
0.2
0.1
10 RG = 2O3hΩm
VGE = 15V
VCC = 480V
1
0.1
IC = 24 A
IC = 12 A
IC = 6 A
0.0 0.01
10
0 10 20 30 40 50
-60 -40 -20 0 20 40 60 80 100 120 140 160
RGRG, ,GGataeteRReessisistatannccee ((OΩh) m)
TJ , Junction Temperature (° C )
Fig. 9 - Typical Switching Losses vs. Gate
Resistance
www.irf.com
Fig. 10 - Typical Switching Losses vs.
Junction Temperature
5
5 Page | ||
| Páginas | Total 8 Páginas | |
| PDF Descargar | [ Datasheet IRG4IBC30W.PDF ] | |
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