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PDF IRG4IBC10UD Data sheet ( Hoja de datos )
| Número de pieza | IRG4IBC10UD | |
| Descripción | INSULATED GATE BIPOLAR TRANSISTOR WITH ULTRAFAST SOFT RECOVERY DIODE | |
| Fabricantes | International Rectifier | |
| Logotipo |  |
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PD - 93765
IRG4IBC10UD
INSULATED GATE BIPOLAR TRANSISTOR WITH
ULTRAFAST SOFT RECOVERY DIODE
UltraFast Co-Pack IGBT
Features
C VCES = 600V
• UltraFast: Optimized for high operating up to
80 kHz in hard switching, > 200 kHz in
resonant mode
• Generation 4 IGBT design provides tighter
parameter distribution and higher efficiency than
previous generation
• IGBT co-packaged with HEXFRED® ultrafast,
ultra-soft-recovery anti-parallel diodes for use
in bridge configurations
• Industry standard TO-220 Full-Pak
G
E
N-channel
VCE(on) typ. = 2.15V
@VGE = 15V, IC = 5.0A
tf(typ.) = 140ns
Benefits
• Generation 4 IGBTs offer highest efficiencies available
• IGBTs optimized for specific application conditions
• HEXFRED® diodes optimized for performance with IGBTs
Minimized recovery characteristics require less/no snubbing
TO-220 Full-Pak
Absolute Maximum Ratings
VCES
IC @ TC = 25°C
IC @ TC = 100°C
ICM
ILM
IF @ TC = 100°C
IFM
VISOL
VGE
PD @ TC = 25°C
PD @ TC = 100°C
TJ
TSTG
Parameter
Collector-to-Emitter Voltage
Continuous Collector Current
Continuous Collector Current
Pulsed Collector Current
Clamped Inductive Load Current
Diode Continuous Forward Current
Diode Maximum Forward Current
RMS Isolated Voltage, Terminal to case, t=1min
Gate-to-Emitter Voltage
Maximum Power Dissipation
Maximum Power Dissipation
Operating Junction and
Storage Temperature Range
Soldering Temperature, for 10 sec
Mounting Torque, 6-32 or M3 Screw
Max.
600
6.8
3.9
27
27
3.9
27
2500
± 20
25
10
-55 to +150
300 (0.063 in. (1.6mm) from case)
10 lbf•in (1.1 N•m)
Thermal Resistance
RθJC
RθJC
RθJA
Wt
www.irf.com
Parameter
Junction-to-Case - IGBT
Junction-to-Case - Diode
Junction-to-Ambient, typical socket mount
Weight
Typ.
–––
–––
–––
2.1 (0.075)
Max.
5.0
9.0
65
–––
Units
V
A
V
W
°C
Units
°C/W
g (oz)
1
10/27/99
1 page  
IRG4IBC10UD
500 VGE = 0V, f = 1MHz
Cies = Cge + Cgc , Cce SHORTED
Cres = Cgc
400 Coes = Cce + Cgc
300 Cies
200
100
0
1
Coes
Cres
10 100
VCE , Collector-to-Emitter Voltage (V)
Fig. 7 - Typical Capacitance vs.
Collector-to-Emitter Voltage
0.30
VCC = 480V
VGE = 15V
TJ = 25 ° C
IC = 5.0A
0.25
20
VCC = 400V
I C = 5.0A
16
12
8
4
0
0 4 8 12 16
QG , Total Gate Charge (nC)
Fig. 8 - Typical Gate Charge vs.
Gate-to-Emitter Voltage
10 RG =1O0h0mΩ
VGE = 15V
VCC = 480V
1
0.1
IC = 10 A
IC = 5.50AA
IC = 2.5 A
0.20
50
60 70 80 90
RG , Gate Resistance (Ohm)
100
0.01
-60 -40 -20 0 20 40 60 80 100 120 140 160
TJ, Junction Temperature ( °C )
Fig. 9 - Typical Switching Losses vs. Gate
Resistance
www.irf.com
Fig. 10 - Typical Switching Losses vs.
Junction Temperature
5
5 Page | ||
| Páginas | Total 10 Páginas | |
| PDF Descargar | [ Datasheet IRG4IBC10UD.PDF ] | |
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