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PDF STP14NF10 Data sheet ( Hoja de datos )
| Número de pieza | STP14NF10 | |
| Descripción | N-CHANNEL Power MOSFET | |
| Fabricantes | ST Microelectronics | |
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STP14NF10
N-channel 100 V - 0.115 Ω - 15 A - TO-220
low gate charge STripFET™ II Power MOSFET
Features
Type
STP14NF10
VDSS RDS(on) max
100 V < 0.13 Ω
ID
15 A
■ Exceptional dv/dt capability
■ 100% avalanche tested
■ Application oriented characterization
Application
■ Switching applications
Description
This Power MOSFET series realized with
STMicroelectronics unique STripFET™ process
has specifically been designed to minimize input
capacitance and gate charge. It is therefore
suitable as primary switch in advanced high-
efficiency, high-frequency isolated DC-DC
converters for telecom and computer applications.
It is also intended for any applications with low
gate drive requirements.
3
2
1
TO-220
Figure 1. Internal schematic diagram
Table 1. Device summary
Order code
STP14NF10
Marking
P14NF10
Package
TO-220
Packaging
Tube
April 2008
Rev 4
1/12
www.st.com
12
1 page  
STP14NF10
Electrical characteristics
Table 6. Source drain diode
Symbol
Parameter
Test conditions
ISD
ISDM (1)
VSD (2)
trr
Qrr
IRRM
Source-drain current
Source-drain current
(pulsed)
Forward on voltage
ISD = 14 A, VGS = 0
Reverse recovery time
Reverse recovery charge
Reverse recovery current
ISD = 14 A,
di/dt = 100 A/µs,
VDD = 50 V, Tj = 150 °C
(see Figure 16)
1. Pulse width limited by safe operating area.
2. Pulsed: Pulse duration = 300 µs, duty cycle 1.5%
Min. Typ. Max. Unit
15 A
60 A
1.5 V
90 ns
230 nC
5A
5/12
5 Page 
STP14NF10
5 Revision history
Revision history
Table 7. Document revision history
Date
Revision
Changes
05-Feb-2004
1 First version
21-Jun-2004
2 Preliminary version
19-Jun-2006
3 New template, no content change
20-Mar-2008
4 Removed packages: D²PAK and TO-220FP
11/12
11 Page | ||
| Páginas | Total 12 Páginas | |
| PDF Descargar | [ Datasheet STP14NF10.PDF ] | |
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