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PDF MSA-1000 Data sheet ( Hoja de datos )

Número de pieza MSA-1000
Descripción Cascadable Silicon Bipolar MMIC Amplifier
Fabricantes Hewlett-Packard 
Logotipo Hewlett-Packard Logotipo



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No Preview Available ! MSA-1000 Hoja de datos, Descripción, Manual

Cascadable Silicon Bipolar
MMIC␣ Amplifier
Technical Data
MSA-1000
Features
• High Output Power:
+27 dBm Typical P1dB at
1.0␣ GHz
• Low Distortion:
37 dBm Typical IP3 at 1.0␣ GHz
• 8.5 dB Typical Gain at
1.0␣ GHz
• Impedance Matched to 25
for Push-Pull Configurations
Description
The MSA-1000 is a high perfor-
mance, medium power silicon
bipolar Monolithic Microwave
Integrated Circuit (MMIC) chip.
This MMIC is designed for use in a
push-pull configuration in a 25␣
system. The MSA-1000 can also be
used as single-ended amplifier in a
50␣ system with slightly reduced
performance. Typical applications
include narrow and broadband RF
amplifiers in industrial and
military systems.
The MSA-series is fabricated using
HP’s 10 GHz fT, 25␣ GHz f MAX,
silicon bipolar MMIC process
which uses nitride self-alignment,
ion implantation, and gold metalli-
zation to achieve excellent
performance, uniformity and
reliability. The use of an external
bias resistor for temperature and
current stability also allows bias
flexibility.
The recommended assembly
procedure is gold-eutectic die
attach at 400°C and either wedge
or ball bonding using 0.7 mil gold
wire.
This chip is intended to be used
with an external blocking capaci-
tor completing the shunt feedback
Chip Outline[1]
3
1
4
2 AK 2
22
path (closed loop). Data sheet
characterization is given for a
80␣ pF capacitor. Low frequency
performance can be extended by
using a larger valued capacitor.[1]
Note:
1. Refer to the APPLICATIONS section
“Silicon MMIC Chip Use” for
additional information.
Typical Push-Pull Biasing Configuration
IN
50
CFbl
R bias
4
C block
MSA
1
2
2
1
MSA
RFC
C block
3
Vd = 15 V
3
C block
4
C block
RFC
VCC > 20 V
50
OUT
5965-9553E
CFbl
VCC > 20 V
R bias
6-442

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