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Número de pieza | STE38NB50 | |
Descripción | N - CHANNEL PowerMESH MOSFET | |
Fabricantes | ST Microelectronics | |
Logotipo | ||
Hay una vista previa y un enlace de descarga de STE38NB50 (archivo pdf) en la parte inferior de esta página. Total 8 Páginas | ||
No Preview Available ! ® STE38NB50
N - CHANNEL 500V - 0.11 Ω - 38A - ISOTOP
PowerMESH™ MOSFET
TYPE
VDSS
RDS(on)
ID
STE38NB50
500 V < 0.13 Ω 38 A
s TYPICAL RDS(on) = 0.11 Ω
s EXTREMELY HIGH dv/dt CAPABILITY
s ± 30V GATE TO SOURCE VOLTAGE RATING
s 100% AVALANCHE TESTED
s LOW INTRINSIC CAPACITANCE
s GATE CHARGE MINIMIZED
s REDUCED VOLTAGE SPREAD
DESCRIPTION
Using the latest high voltage MESH OVERLAY™
process, SGS-Thomson has designed an ad-
vanced family of power MOSFETs with outstand-
ing performances. The new patent pending strip
layout coupled with the Company’s proprietary
edge termination structure, gives the lowest
RDS(on) per area, exceptional avalanche and
dv/dt capabilities and unrivalled gate charge and
switching characteristics.
APPLICATIONS
s HIGH CURRENT, HIGH SPEED SWITCHING
s SWITCH MODE POWER SUPPLY (SMPS)
s DC-AC CONVERTER FOR WELDING
EQUIPMENT AND UNINTERRUPTABLE
POWER SUPPLY AND MOTOR DRIVE
ISOTOP
INTERNAL SCHEMATIC DIAGRAM
ABSOLUTE MAXIMUM RATINGS
Symbol
Parameter
VDS
VDGR
Drain-source Voltage (VGS = 0)
Drain- gate Voltage (RGS = 20 kΩ)
VGS Gate-source Voltage
ID Drain Current (continuous) at Tc = 25 oC
ID Drain Current (continuous) at Tc = 100 oC
IDM(•)
Ptot
Drain Current (pulsed)
Total Dissipation at Tc = 25 oC
Derating Factor
dv/dt(1) Peak Diode Recovery voltage slope
Tstg Storage Temperature
Tj Max. Operating Junction Temperature
(•) Pulse width limited by safe operating area
June 1998
Value
Unit
500 V
500 V
± 30
V
38 A
24 A
152 A
400 W
3.2 W/oC
4.5
-65 to 150
150
(1) ISD ≤38 A, di/dt ≤ 200 A/µs, VDD ≤ V(BR)DSS, Tj ≤ TJMAX
V/ns
oC
oC
1/8
1 page Normalized Gate Threshold Voltage vs
Temperature
STE38NB50
Normalized On Resistance vs Temperature
Source-drain Diode Forward Characteristics
5/8
5 Page |
Páginas | Total 8 Páginas | |
PDF Descargar | [ Datasheet STE38NB50.PDF ] |
Número de pieza | Descripción | Fabricantes |
STE38NB50 | N - CHANNEL PowerMESH MOSFET | ST Microelectronics |
STE38NB50F | N - CHANNEL PowerMESH MOSFET | ST Microelectronics |
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