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PDF DG212B Data sheet ( Hoja de datos )

Número de pieza DG212B
Descripción (DG211B / DG212B) Improved Quad CMOS Analog Switches
Fabricantes Vishay Intertechnology 
Logotipo Vishay Intertechnology Logotipo



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No Preview Available ! DG212B Hoja de datos, Descripción, Manual

DG211B/212B
Vishay Siliconix
Improved Quad CMOS Analog Switches
FEATURES
D "22-V Supply Voltage Rating
D TTL and CMOS Compatible Logic
D Low On-Resistance—rDS(on): 50 W
D Low Leakage—ID(on): 20 pA
D Single Supply Operation Possible
D Extended Temperature Range
D Fast Switching—tON: 120 ns
D Low Charge Injection—Q: 1 pC
BENEFITS
D Wide Analog Signal Range
D Simple Logic Interface
D Higher Accuracy
D Minimum Transients
D Reduced Power Consumption
D Superior to DG211/212
D Space Savings (TSSOP)
APPLICATIONS
D Industrial Instrumentation
D Test Equipment
D Communications Systems
D Disk Drives
D Computer Peripherals
D Portable Instruments
D Sample-and-Hold Circuits
DESCRIPTION
The DG211B/212B analog switches are highly improved
versions of the industry-standard DG211/212. These devices
are fabricated in Vishay Siliconix’ proprietary silicon gate
CMOS process, resulting in lower on-resistance, lower
leakage, higher speed, and lower power consumption.
These quad single-pole single-throw switches are designed
for a wide variety of applications in telecommunications,
instrumentation, process control, computer peripherals, etc. An
improved charge injection compensation design minimizes
switching transients. The DG211B and DG212B can handle
up to "22 V, and have an improved continuous current rating
of 30 mA. An epitaxial layer prevents latchup.
All devices feature true bi-directional performance in the on
condition, and will block signals to the supply levels in the off
condition.
The DG211B is a normally closed switch and the DG212B is
a normally open switch. (See Truth Table.)
FUNCTIONAL BLOCK DIAGRAM AND PIN CONFIGURATION
DG211B
Dual-In-Line, SOIC and TSSOP
IN1
D1
S1
V–
GND
S4
D4
IN4
1
2
3
4
5
6
7
8
Top View
16 IN2
15 D2
14 S2
13 V+
12 VL
11 S3
10 D3
9 IN3
Document Number: 70040
S-00788—Rev. H, 24-Apr-00
TRUTH TABLE
Logic
DG211B
DG212B
0 ON OFF
1
OFF
ON
Logic “0” v 0.8 V
Logic “1” w 2.4 V
www.vishay.com S FaxBack 408-970-5600
4-1

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DG212B pdf
DG211B/212B
Vishay Siliconix
TYPICAL CHARACTERISTICS (25_C UNLESS NOTED)
rDS(on) vs. VD and Single Power Supply Voltages
250
225 V+ = 5 V
200
175
150
7V
125
10 V
100 12 V
75 15 V
50
25
Leakage Currents vs. Analog Voltage
40
V+ = 22 V
30 V– = –22 V
TA = 25_C
20 ID(on)
10
0 IS(off), ID(off)
–10
–20
–30
0
0 2 4 6 8 10 12 14 16
VD – Drain Voltage (V)
–40
–20 –15 –10 –5 0 5 10
VANALOG – Analog Voltage (V)
15
20
Leakage Current vs. Temperature
1 nA
V+ = 15 V
V– = –15 V
VS, VD = "14 V
QS, QD – Charge Injection vs. Analog Voltage
30
20
100 pA
10 pA
IS(off), ID(off)
10
V+ = 15 V
0 V– = –15 V
–10
–20
V+ = 12 V
V– = 0 V
1 pA
–55 –35 –15 5
25 45 65
Temperature (_C)
85 105 125
–30
–15
–10 –5
0
5 10
VANALOG – Analog Voltage (V)
120
110
100
90
80
70
60
50
40
10 k
Off Isolation vs. Frequency
V+ = +15 V
V– = –15 V
RL = 50 W
100 k
1M
f – Frequency (Hz)
10 M
15
Document Number: 70040
S-00788—Rev. H, 24-Apr-00
www.vishay.com S FaxBack 408-970-5600
4-5

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