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PDF H945 Datasheet ( Hoja de datos )

Número de pieza H945
Descripción NPN Silicon Transistors
Fabricantes Shantou Huashan Electronic Devices 
Logotipo Shantou Huashan Electronic Devices Logotipo



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H945 Hoja de datos, Descripción, Manual
Shantou Huashan Electronic Devices Co.,Ltd.
NPN SILICON TRANSISTOR
H945
APPLICATIONS
The H945 is designed for driver stage of AF amplifier
And low speed switching.
ABSOLUTE MAXIMUM RATINGS Ta=25
Tstg Storage Temperature
-55~150
Tj Junction Temperature
150
PC Collector Dissipation
250mW
VCBO Collector-Base Voltage
60V
VCEO Collector-Emitter Voltage
50V
VEBO Emitter-Base Voltage
5V
IC Collector Current
150mA
TO-92
1 Emitter E
2 Collector C
3 Base B
ELECTRICAL CHARACTERISTICS Ta=25
Symbol
Characteristics
Min
BVCBO
BVCEO
BVEBO
HFE
Collector-Base Breakdown Voltage
Collector-Emitter Breakdown Voltage
Emitter-Base Breakdown Voltage
DC Current Gain
60
50
5
90
VCE(sat) Collector- Emitter Saturation Voltage
VBE(sat) Base-Emitter Saturation Voltage
ICBO Collector Cut-off Current
IEBO Emitter Cut-off Current
fT Current Gain-Bandwidth Product
Cob Output Capacitance
mNF Noise Figure
u.cohFE Classification
eet4R
www.datash90 180
Q
135 270
Typ Max Unit
Test Conditions
V IC=100 A, IE=0
V IC=100 A, IB=0
V IE=100 A IC=0
600 VCE=6V, IC=1mA
0.3 V IC=100mA, IB=10mA
1.0 V IC=100mA, IB=10mA
100 nA VCB=60V, IE=0
100 nA VEB=5V, IC=0
250 MHz VCE=6V, IC=10mA
3.0 pF VCB=6V, IE=0 f=1MHz
4.0
dB
VCE=6V,IC=0.5mA f=1KHz
Rs=500
P
200 400
K
300 600

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