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PDF B1453 Data sheet ( Hoja de datos )
| Número de pieza | B1453 | |
| Descripción | PNP Transistor - 2SB1453 | |
| Fabricantes | NEC | |
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Hay una vista previa y un enlace de descarga de B1453 (archivo pdf) en la parte inferior de esta página. Total 6 Páginas | ||
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DATA SHEET
SILICON TRANSISTOR
2SB1453
PNP SILICON EPITAXIAL POWER TRANSISTOR
FOR HIGH-SPEED SWITCHING
The 2SB1453 is a power transistor that can directly drive from
the IC output. This transistor is ideal for motor drivers and solenoid
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drivers in such as OA and FA equipment.
In addition, a small resin-molded insulation type package
contributes to high-density mounting and reduction of mounting
cost.
FEATURES
• High DC current amplifier ratio
hFE ≥ 100 (VCE = −5 V, IC = −0.5 A)
• Mold package that does not require an insulating board or
insulation bushing
ABSOLUTE MAXIMUM RATINGS (Ta = 25°C)
Parameter
Symbol
Collector to base voltage
VCBO
Collector to emitter voltage
VCEO
Emitter to base voltage
VEBO
Collector current (DC)
IC(DC)
Collector current (pulse)
IC(pulse)*
Base current (DC)
IB(DC)
Total power dissipation
PT (Tc = 25°C)
Total power dissipation
PT (Ta = 25°C)
Junction temperature
Tj
Storage temperature
Tstg
* PW ≤ 10 ms, duty cycle ≤ 50%
Ratings
−60
−60
−7.0
−3.0
−6.0
−1.0
25
2.0
150
−55 to +150
Unit
V
V
V
A
A
A
W
W
°C
°C
PACKAGE DRAWING (UNIT: mm)
Electrode Connection
1. Base
2. Collector
3. Emitter
The information in this document is subject to change without notice. Before using this document, please
confirm that this is the latest version.
Not all devices/types available in every country. Please check with local NEC representative for
availability and additional information.
Document No. D16129EJ2V0DS00 (2nd edition)
Date Published July 2002 N CP(K)
Printed in Japan
©
21090928
1 page  
[MEMO]
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2SB1453
Data Sheet D16129EJ2V0DS
5
5 Page | ||
| Páginas | Total 6 Páginas | |
| PDF Descargar | [ Datasheet B1453.PDF ] | |
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