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PDF IRFP15N60L Data sheet ( Hoja de datos )

Número de pieza IRFP15N60L
Descripción HEXFET Power MOSFET
Fabricantes International Rectifier 
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No Preview Available ! IRFP15N60L Hoja de datos, Descripción, Manual

PD - 94415
SMPS MOSFET IRFP15N60L
Applications
Zero Voltage Switching SMPS
Telecom and Server Power Supplies
Uninterruptible Power Supplies
Motor Control applications
HEXFET® Power MOSFET
VDSS RDS(on) typ. Trr typ. ID
600V 385m130ns 15A
Features and Benefits
SuperFast body diode eliminates the need for external
diodes in ZVS applications.
Lower Gate charge results in simpler drive requirements.
Enhanced dv/dt capabilities offer improved ruggedness.
Higher Gate voltage threshold offers improved noise immunity.
TO-247AC
Absolute Maximum Ratings
Parameter
ID @ TC = 25°C Continuous Drain Current, VGS @ 10V
cID @ TC = 100°C Continuous Drain Current, VGS @ 10V
IDM Pulsed Drain Current
PD @TC = 25°C Power Dissipation
Max.
15
9.7
60
280
Units
A
W
VGS
dv/dt
Linear Derating Factor
dGate-to-Source Voltage
Peak Diode Recovery dv/dt
2.3 W/°C
±30 V
10 V/ns
TJ
TSTG
Operating Junction and
Storage Temperature Range
-55 to + 150
°C
Soldering Temperature, for 10 seconds
300 (1.6mm from case )
Mounting torque, 6-32 or M3 screw
Diode Characteristics
1.1(10)
N•m (lbf•in)
Symbol
Parameter
Min. Typ. Max. Units Conditions
IS
Continuous Source Current
––– ––– 15
MOSFET symbol
D
(Body Diode)
A showing the
ÃcISM Pulsed Source Current
(Body Diode)
VSD Diode Forward Voltage
––– ––– 60
––– ––– 1.5
integral reverse
G
fp-n junction diode.
V TJ = 25°C, IS = 15A, VGS = 0V
S
trr Reverse Recovery Time
––– 130 200 ns TJ = 25°C, IF = 15A
f––– 240 360
TJ = 125°C, di/dt = 100A/µs
fQrr Reverse Recovery Charge ––– 450 670 nC TJ = 25°C, IS = 15A, VGS = 0V
f––– 1080 1620
TJ = 125°C, di/dt = 100A/µs
IRRM Reverse Recovery Current
––– 5.8 8.7 A TJ = 25°C
ton Forward Turn-On Time
Intrinsic turn-on time is negligible (turn-on is dominated by LS+LD)
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1
02/14/03

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IRFP15N60L pdf
IRFP15N60L
1000
100
OPERATION IN THIS AREA
LIMITED BY R DS(on)
10
100µsec
1 1msec
Tc = 25°C
Tj = 150°C
Single Pulse
0.1
10msec
1 10 100 1000
VDS, Drain-to-Source Voltage (V)
10000
Fig 9. Maximum Safe Operating Area
16
14
12
10
8
6
4
2
0
25
50 75 100 125
TC , Case Temperature (°C)
150
Fig 10. Maximum Drain Current vs.
Case Temperature
VDS
VGS
RG
RD
D.U.T.
10V
Pulse Width ≤ 1 µs
Duty Factor ≤ 0.1 %
+-VDD
Fig 11a. Switching Time Test Circuit
VDS
90%
10%
VGS
td(on) tr
td(off) tf
Fig 11b. Switching Time Waveforms
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