PDF NIF62514 Data sheet ( Hoja de datos )

Número de pieza	NIF62514
Descripción	Self-protected FET with Temperature and Current Limit
Fabricantes	ON Semiconductor
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No Preview Available ! NIF62514 Preferred Device Self−protected FET with Temperature and Current Limit HDPlus devices are an advanced series of power MOSFETs which utilize ON Semiconductor’s latest MOSFET technology process to achieve the lowest possible on-resistance per silicon area while incorporating smart features. Integrated thermal and current limits work together to provide short circuit protection. The devices feature an integrated Drain-to-Gate Clamp that enables them to withstand high energy in the avalanche mode. The Clamp also provides additional safety margin against unexpected voltage transients. Electrostatic Discharge (ESD) protection is provided by an integrated Gate-to-Source Clamp. Features • Current Limitation • Thermal Shutdown with Automatic Restart • Short Circuit Protection • Low RDS(on) • IDSS Specified at Elevated Temperature • Avalanche Energy Specified • Slew Rate Control for Low Noise Switching • Overvoltage Clamped Protection http://onsemi.com 6.0 AMPERES* 40 VOLTS CLAMPED RDS(on) = 90 mW Drain Gate Input Overvoltage Protection RG MPWR ESD Protection Temperature Current Current Limit Limit Sense Source MOSFET MAXIMUM RATINGS (TJ = 25°C unless otherwise noted) Rating Symbol Value Unit Drain-to-Source Voltage Internally Clamped Drain-to-Gate Voltage Internally Clamped (RGS = 1.0 MW) Gate-to-Source Voltage Drain Current - Continuous @ TA = 25°C - Continuous @ TA = 100°C - Pulsed (tp ≤ 10 ms) Total Power Dissipation @ TA = 25°C (Note 1) @ TA = 25°C (Note 2) @ TA = 25°C (Note 3) Thermal Resistance - Junction-to-Tab Junction-to-Ambient (Note 1) Junction-to-Ambient (Note 2) Single Pulse Drain- to- Source Avalanche Energy (VDD = 25 Vdc, VGS = 5.0 Vdc, VDS = 40 Vdc, IL = 2.8 Apk, L = 80 mH, RG = 25 W) Operating and Storage Temperature Range VDSS VDGR VGS ID ID IDM PD RqJT RqJA RqJA EAS TJ, Tstg 40 Vdc 40 Vdc "16 Vdc Internally Limited 1.1 W 1.73 8.93 14 °C/W 114 72.3 300 mJ -55 to 150 °C 1. Mounted onto min pad board. 2. Mounted onto 1″ pad board. 3. Mounted onto large heatsink. SOT-223 CASE 318E STYLE 3 MARKING DIAGRAM GATE DRAIN SOURCE 1 2 3 4 DRAIN (Top View) 62514 = Specific Device Code L = Location Code WW = Work Week ORDERING INFORMATION Device Package Shipping NIF62514T1 SOT-223 1000/Tape & Reel NIF62514T3 SOT-223 4000/Tape & Reel *Limited by the current limit circuit. Preferred devices are recommended choices for future use and best overall value. © Semiconductor Components Industries, LLC, 2003 April, 2003 - Rev. 3 1 Publication Order Number: NIF62514/D 1 page NIF62514 PACKAGE DIMENSIONS SOT-223 CASE 318E-04 ISSUE K A F 4 S 1 23 B L G 0.08 (0003) H D C M J K NOTES: 1. DIMENSIONING AND TOLERANCING PER ANSI Y14.5M, 1982. 2. CONTROLLING DIMENSION: INCH. INCHES DIM MIN MAX A 0.249 0.263 B 0.130 0.145 C 0.060 0.068 D 0.024 0.035 F 0.115 0.126 G 0.087 0.094 H 0.0008 0.0040 J 0.009 0.014 K 0.060 0.078 L 0.033 0.041 M 0_ 10 _ S 0.264 0.287 MILLIMETERS MIN MAX 6.30 6.70 3.30 3.70 1.50 1.75 0.60 0.89 2.90 3.20 2.20 2.40 0.020 0.100 0.24 0.35 1.50 2.00 0.85 1.05 0 _ 10 _ 6.70 7.30 STYLE 3: PIN 1. GATE 2. DRAIN 3. SOURCE 4. DRAIN http://onsemi.com 5 5 Page

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