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Número de pieza | SD56120 | |
Descripción | RF POWER TRANSISTORS | |
Fabricantes | ST Microelectronics | |
Logotipo | ||
Hay una vista previa y un enlace de descarga de SD56120 (archivo pdf) en la parte inferior de esta página. Total 15 Páginas | ||
No Preview Available ! SD56120
RF power transistor, the LdmoST family
Features
■ Excellent thermal stability
■ Common source configuration Push-pull
■ POUT = 100 W with 14 dB gain @ 860 MHz
■ BeO-free package
Description
The SD56120 is a common source N-Channel
enhancement-mode lateral Field-Effect RF power
transistor designed for broadband commercial
and industrial applications at frequencies up to
1.0 GHz. The SD56120 is designed for high gain
and broadband performance operating in
common source mode at 28 V. It is ideal for
broadcast applications from 470 to 860 MHz
requiring high linearity.
M246
Epoxy sealed
Figure 1. Pin connections
12
Table 1.
Device summary
Order code
SD56120
1-2 Drain
4-5 Gate
5
4
3 Source
Package
M246
Branding
SD56120
September 2009
Doc ID 6873 Rev 4
1/15
www.st.com
15
1 page SD56120
3 Impedances
Figure 2. Current conventions
Impedances
Table 6. Impedance data
Freq. (MHz)
860 MHz
ZIN (Ω)
1.11 - j 2.63
Measured drain to drain and gate to gate respectively.
ZDL(Ω)
3.01 + j 5.34
Doc ID 6873 Rev 4
5/15
5 Page SD56120
Figure 15. 860 MHz production test fixture
+
Test circuit
++
Figure 16. 860 MHz test circuit photomaster
6.4 inches
Doc ID 6873 Rev 4
11/15
11 Page |
Páginas | Total 15 Páginas | |
PDF Descargar | [ Datasheet SD56120.PDF ] |
Número de pieza | Descripción | Fabricantes |
SD56120 | RF POWER TRANSISTORS | ST Microelectronics |
SD56120M | RF POWER TRANSISTORS | STMicroelectronics |
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