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PDF 2N2150 Data sheet ( Hoja de datos )
| Número de pieza | 2N2150 | |
| Descripción | NPN POWER SILICON TRANSISTOR | |
| Fabricantes | Microsemi Corporation | |
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NPN POWER SILICON TRANSISTOR
Qualified per MIL-PRF-19500/277
Devices
2N2150
2N2151
TECHNICAL DATA
Qualified Level
JANTX
MAXIMUM RATINGS (TC = 250C unless otherwise noted)
Ratings
Symbol Value
Collector-Emitter Voltage
VCEO
100
Collector-Base Voltage
VCBO
150
Emitter-Base Voltage
VEBO
8.0
Base Current
IB 2.0
Collector Current
Total Power Dissipation
@ Tc = +1000C(1)
IC
PT
2.0
30
Operating & Storage Junction Temperature Range TJ, Tstg -65 to +200
THERMAL CHARACTERISTICS
Characteristics
Symbol
Max.
Thermal Resistance, Junction-to-Case
1) Derate linearly @ 0.3 W/0C for TC > +1000C
RθJC
3.3
Units
Vdc
Vdc
Vdc
Adc
Adc
W
0C
Unit
0C/W
ELECTRICAL CHARACTERISTICS (TC = +250C)
Characteristics
OFF CHARACTERISTICS
Collector-Emitter Breakdown Voltage
IC = 50 mAdc
Collector-Emitter Breakdown Voltage
IC = 100 µAdc
Collector-Emitter Cutoff Current
VCE = 80 Vdc
Collector-Base Cutoff Current
VCB = 120 Vdc
Collector-Emitter Cutoff Current
VCE = 120 Vdc, VBE = -1.0 Vdc
Emitter-Base Cutoff Current
VEB = 8.0 Vdc
Collector-Emitter Cutoff Current
VCE = 120 Vdc, VBE = 0 Vdc
6 Lake Street, Lawrence, MA 01841
1-800-446-1158 / (978) 794-1666 / Fax: (978) 689-0803
Symbol
V(BR)CEO
VCBO
ICEO
ICBO
ICEX
IEBO
ICES
TO-111*
*See Appendix A for
Package Outline
Min. Max.
Unit
100 Vdc
150 Vdc
10 µAdc
5.0 µAdc
5.0 µAdc
2.0 µAdc
5.0 µAdc
120101
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