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Número de pieza | 2SB1678 | |
Descripción | Silicon PNP Epitaxial Planer Type | |
Fabricantes | Panasonic | |
Logotipo | ||
Hay una vista previa y un enlace de descarga de 2SB1678 (archivo pdf) en la parte inferior de esta página. Total 2 Páginas | ||
No Preview Available ! Transistors
2SB1678
Silicon PNP epitaxial planer type
For low-frequency amplification
I Features
• Low collector to emitter saturation voltage VCE(sat)
• Large Peak collector current ICP
• Mini power type package, allowing downsizing and thinning of the
equipment and automatic insertion through the tape packing
I Absolute Maximum Ratings Ta = 25°C
Parameter
Symbol Rating
Unit
Collector to base voltage
Collector to emitter voltage
Emitter to base voltage
Peak collector current
Collector current
Collector power dissipation *
Junction temperature
Storage temperature
VCBO
VCEO
VEBO
ICP
IC
PC
Tj
Tstg
−30
−20
−7
−5
−3
1
150
−55 to +150
V
V
V
A
A
W
°C
°C
Note) *: Printed circuit board copper foil for collector portion
area: 1.0 Cm2 or more, thickness: 1.7 mm
Absolute maximum rating PC Without heat sink shall be 0.5 W
4.5±0.1
1.6±0.2
Unit: mm
1.5±0.1
3
0.4±0.08
1.5±0.1
21
0.5±0.08
3˚
3.0±0.15
0.4±0.04
45˚
1: Emitter
2: Collector
3: Base
MiniP3 Type Package
Marking Symbol: 2K
I Electrical Characteristics Ta = 25°C ± 3°C
Parameter
Symbol
Conditions
Min
Collector cutoff current
Emitter cutoff current
Collector to emitter voltage
Emitter to base voltage
Forward current transfer ratio *1, 2
Collector to emitter saturation voltage *1
Collector output capacitance
Transition frequency
ICBO
IEBO
VCEO
VEBO
hFE
VCE(sat)
Cob
fT
VCB = −10 V, IE = 0
VEB = −5 V, IC = 0
IC = −1 mA, IB = 0
IE = −10 µA, IC = 0
VCE = −2 V, IC = 200 mA
IC = −3 A, IB = − 0.1 A
VCB = −20 V, IE = 0, f = 1 MHz
VCB = −6 V, IE = 50 mA, f = 200 MHz
−20
−7
90
Note) *1: Pulse measurement
*2: Rank classification
Rank
P
Q
R
hFE 90 to 135 120 to 205 180 to 625
Typ Max
−100
−100
625
−1
85
120
Unit
nA
nA
V
V
V
pF
MHz
1
1 page |
Páginas | Total 2 Páginas | |
PDF Descargar | [ Datasheet 2SB1678.PDF ] |
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