(PDF) KRC281M Datasheet - (KRC281M - KRC286M) EPITAXIAL PLANAR NPN TRANSISTOR

Número de pieza	KRC281M
Descripción	(KRC281M - KRC286M) EPITAXIAL PLANAR NPN TRANSISTOR
Fabricantes	Korea Electronics
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No Preview Available ! SEMICONDUCTOR TECHNICAL DATA SWITCHING APPLICATION. AUDIO MUTING APPLICATION. FEATURES High emitter-base voltage : VEBO=25V(Min) High reverse hFE : reverse hFE=150(Typ.) (VCE=-2V, IC=-4mA) Low on resistance : Ron=1 (Typ.) (IB=5mA) With Built-in Bias Resistors. Simplify Circuit Design. Reduce a Quantity of Parts and Manufacturing Process. EQUIVALENT CIRCUIT R1 B C E KRC281M~KRC286M EPITAXIAL PLANAR NPN TRANSISTOR B HM C EE 1 2 3N L 1. EMITTER 2. COLLECTOR 3. BASE O DIM MILLIMETERS A 3.20 MAX B 4.30 MAX C 0.55 MAX D 2.40+_ 0.15 E 1.27 F 2.30 G 14.00+_ 0.50 H 0.60 MAX J 1.05 K 1.45 L 25 M 0.80 N 0.55 MAX O 0.75 TO-92M MAXIMUM RATING (Ta=25 ) CHARACTERISTIC Collector-Base Voltage Collector-Emitter Voltage Emitter-Base Voltage Collector Current Collector Power Dissipation Junction Temperature Storage Temperature Range SYMBOL VCBO VCEO VEBO IC PC Tj Tstg RATING 50 20 25 300 400 150 -55 150 UNIT V V V mA W 2002. 12. 5 Revision No : 1 1/2 1 page

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PDF Descargar	[ Datasheet KRC281M.PDF ]

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PDF KRC281M Data sheet ( Hoja de datos )