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PDF UPD448012-X Data sheet ( Hoja de datos )

Número de pieza UPD448012-X
Descripción 8M-BIT CMOS STATIC RAM 512K-WORD BY 16-BIT EXTENDED TEMPERATURE OPERATION
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DATA SHEET
MOS INTEGRATED CIRCUIT
µ PD448012-X
8M-BIT CMOS STATIC RAM
512K-WORD BY 16-BIT
EXTENDED TEMPERATURE OPERATION
Description
The µPD448012-X is a high speed, low power, 8,388,608 bits (524,288 words by 16 bits) CMOS static RAM.
The µPD448012-X has two chip enable pins (/CE1, CE2) to extend the capacity.
The µPD448012-X is packed in 48-pin PLASTIC TSOP (I) (Normal bent).
Features
• 524,288 words by 16 bits organization
 • Fast access time: 55, 70, 85, 100, 120 ns (MAX.)
• Byte data control: /LB (I/O1 - I/O8), /UB (I/O9 - I/O16)
 • Low voltage operation
(B version: VCC = 2.7 to 3.6 V, C version: VCC = 2.2 to 3.6 V)
• Low VCC data retention : 1.0 V (MIN.)
• Operating ambient temperature: TA = –25 to +85°C
• Output Enable input for easy application
• Two Chip Enable inputs: /CE1, CE2
Part number
Access time Operating supply Operating ambient
ns (MAX.)
voltage
temperature
At operating
 µPD448012-BxxX
 µPD448012-CxxX
55, 70, 85, 100
70, 85, 100, 120
V
2.7 to 3.6
2.2 to 3.6
°C
−25 to +85
mA (MAX.)
45 Note
45
 Note Cycle time ≥ 70 ns, µPD448012-B55X : 50 mA
Supply current
At standby
µA (MAX.)
At data retention
µA (MAX.)
15 6
The information in this document is subject to change without notice. Before using this document, please
confirm that this is the latest version.
Not all devices/types available in every country. Please check with local NEC representative for
availability and additional information.
Document No. M14466EJ5V0DS00 (5th edition)
Date Published July 2001 NS CP (K)
Printed in Japan
The mark 5 shows major revised points.
©
1999

1 page




UPD448012-X pdf
Electrical Specifications
µPD448012-X
Absolute Maximum Ratings
Parameter
Supply voltage
Input / Output voltage
Operating ambient temperature
Storage temperature
Symbol
VCC
VT
TA
Tstg
Note –3.0 V (MIN.) (Pulse width : 30 ns)
Condition
Rating
–0.5 Note to +4.0
–0.5 Note to VCC + 0.4 (4.0 V MAX.)
–25 to +85
–55 to +125
Unit
V
V
°C
°C
Caution Exposing the device to stress above those listed in Absolute Maximum Rating could cause
permanent damage. The device is not meant to be operated under conditions outside the limits
described in the operational section of this specification. Exposure to Absolute Maximum Rating
conditions for extended periods may affect device reliability.
 Recommended Operating Conditions
Parameter
Symbol
Condition
Supply voltage
High level input voltage
VCC
VIH
Low level input voltage
Operating ambient temperature
VIL
TA
Note –1.5 V (MIN.) (Pulse width: 30 ns)
2.7 V ≤ VCC ≤ 3.6 V
2.2 V ≤ VCC < 2.7 V
µPD448012-BxxX
µPD448012-CxxX
MIN.
MAX.
MIN.
MAX.
2.7 3.6 2.2 3.6
2.4 VCC + 0.4 2.4 VCC + 0.4
–
–0.3 Note
–
+0.5
2.0
–0.3 Note
VCC + 0.3
+0.3
–25 +85 –25 +85
Unit
V
V
V
°C
Capacitance (TA = 25°C, f = 1 MHz)
Parameter
Input capacitance
Input / Output capacitance
Symbol
CIN
CI/O
Test condition
VIN = 0 V
VI/O = 0 V
Remarks 1. VIN : Input voltage, VI/O : Input / Output voltage
2. These parameters are not 100% tested.
MIN.
TYP.
MAX.
8
10
Unit
pF
pF
Data Sheet M14466EJ5V0DS
5

5 Page





UPD448012-X arduino
µPD448012-X
Write Cycle (1/2) (B version)
Parameter
Symbol
VCC ≥ 2.7 V
Unit Condition
µPD448012 µPD448012 µPD448012 µPD448012
-B55X
-B70X
-B85X
-B10X
MIN. MAX. MIN. MAX. MIN. MAX. MIN. MAX.
Write cycle time
/CE1 to end of write
CE2 to end of write
/LB, /UB to end of write
Address valid to end of write
Address setup time
Write pulse width
Write recovery time
Data valid to end of write
Data hold time
/WE to output in high impedance
Output active from end of write
tWC 55 70 85 100 ns
tCW1
50
55
70
80
ns
tCW2
50
55
70
80
ns
tBW 50 55 70 80
ns
tAW 50 55 70 80
ns
tAS 0 0 0 0 ns
tWP 45 50 55 60
ns
tWR 0 0 0 0 ns
tDW 25 30 35 40
ns
tDH 0 0 0 0 ns
tWHZ 20 25 30 35 ns
tOW 5 5 5 5 ns
Note
Note The output load is 1TTL + 5 pF.
Write Cycle (2/2) (C version)
Parameter
Symbol
VCC ≥ 2.2V
Unit Condition
µPD448012 µPD448012 µPD448012 µPD448012
-C70X
-C85X
-C10X
-C12X
MIN. MAX. MIN. MAX. MIN. MAX. MIN. MAX.
Write cycle time
/CE1 to end of write
CE2 to end of write
/LB, /UB to end of write
Address valid to end of write
Address setup time
Write pulse width
Write recovery time
Data valid to end of write
Data hold time
/WE to output in high impedance
Output active from end of write
tWC 70
85 100 120
ns
tCW1
55
70
80 100
ns
tCW2
55
70
80 100
ns
tBW 55 70 80 100 ns
tAW 55 70 80 100 ns
tAS 0 0 0 0 ns
tWP 50 55 60 85
ns
tWR 0 0 0 0 ns
tDW 30 35 40 60
ns
tDH 0 0 0 0 ns
tWHZ 25 30 35 40 ns
tOW 5 5 5 5 ns
Note
Note The output load is 1TTL + 5 pF.
Data Sheet M14466EJ5V0DS
11

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