|
|
PDF IRFM260 Data sheet ( Hoja de datos )
| Número de pieza | IRFM260 | |
| Descripción | TRANSISTOR N-CHANNEL | |
| Fabricantes | International Rectifier | |
| Logotipo |  |
|
Hay una vista previa y un enlace de descarga de IRFM260 (archivo pdf) en la parte inferior de esta página. Total 8 Páginas | ||
|
No Preview Available !
Previous Datasheet
Index
Next Data Sheet
Provisional Data Sheet No. PD-9.1388A
REPETITIVE AVALANCHE AND dv/dt RATED
HEXFET® TRANSISTOR
IRFM260
N-CHANNEL
200Volt, 0.060Ω, HEXFET
HEXFET technology is the key to International
Rectifier’s advanced line of power MOSFET tran-
sistors. The efficient geometry design achieves very
low on-state resistance combined with high
transconductance.
HEXFET transistors also feature all of the well-es-
tablished advantages of MOSFETs, such as volt-
age control, very fast switching, ease of paralleling
and electrical parameter temperature stability. They
are well-suited for applications such as switching
power supplies, motor controls, inverters, choppers,
audio amplifiers and high-energy pulse circuits, and
virtually any application where high reliability is re-
quired.
HEXFET transistor’s totally isolated package elimi-
nates the need for additional isolating material be-
tween the device and the heatsink. This improves
thermal efficiency and reduces drain capacitance.
Product Summary
Part Number BVDSS
IRFM260
200V
Features:
n Hermetically Sealed
n Electrically Isolated
n Simple Drive Requirements
n Ease of Paralleling
n Ceramic Eyelet
RDS(on)
0.060Ω
ID
35A*
Absolute Maximum Ratings
Parameter
ID @ VGS = 10V, TC = 25°C Continuous Drain Current
ID @ VGS = 10V, TC = 100°C Continuous Drain Current
IDM Pulsed Drain Current
PD @ TC = 25°C
Max. Power Dissipation
Linear Derating Factor
VGS
EAS
IAR
EAR
dv/dt
Gate-to-Source Voltage
Single Pulse Avalanche Energy
Avalanche Current
Repetitive Avalanche Energy
Peak Diode Recovery dv/dt
TJ
TSTG
Operating Junction
Storage Temperature Range
Lead Temperature
Weight
To Order
Pre-Radiation
IRFM260
Units
35*
28 A
180
250 W
2.0 W/K
±20 V
700 mJ
35 A
25 mJ
4.3 V/ns
-55 to 150
oC
300(0.063 in.(1.6mm) from case for 10s)
9.3 (typical)
g
1 page  
Previous Datasheet
50
LIM ITE D B Y P ACK AGE
40
30
20
10
Index
Next Data Sheet
VDS
VGS
RG
10V
Pulse Width ≤ 1 µs
Duty Factor ≤ 0.1 %
IRFM260
RD
D.U.T.
+-VDD
Fig 10a. Switching Time Test Circuit
VDS
90%
0A
25 50 75 100 125 150
TC , C ase T emperature (°C)
Fig 9. Maximum Drain Current Vs.
Case Temperature
10%
VGS
td(on) tr
td(off) tf
Fig 10b. Switching Time Waveforms
1
D = 0.50
0 . 1 0.20
0 .1 0
0 .0 5
0 .0 2
0. 0 1
0.01
SING LE P ULSE
(THERMA L RES PONSE)
0.001
0.00001
0.0001
PD M
N otes:
1. D uty factor D = t1 / t2
t1
t2
2. P eak TJ = P D M x Z th J C + T C
0.001
0.01
0.1
t1 , Re ctang ular Pulse Duration (sec )
1
Fig 11. Maximum Effective Transient Thermal Impedance, Junction-to-Case
A
10
To Order
5 Page | ||
| Páginas | Total 8 Páginas | |
| PDF Descargar | [ Datasheet IRFM260.PDF ] | |
Hoja de datos destacado
| Número de pieza | Descripción | Fabricantes |
| IRFM260 | TRANSISTOR N-CHANNEL | International Rectifier |
| Número de pieza | Descripción | Fabricantes |
| SLA6805M | High Voltage 3 phase Motor Driver IC. |
 Sanken |
| SDC1742 | 12- and 14-Bit Hybrid Synchro / Resolver-to-Digital Converters. |
 Analog Devices |
|
DataSheet.es es una pagina web que funciona como un repositorio de manuales o hoja de datos de muchos de los productos más populares, |
| DataSheet.es | 2020 | Privacy Policy | Contacto | Buscar |