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PDF KMM5362205C2W Data sheet ( Hoja de datos )
| Número de pieza | KMM5362205C2W | |
| Descripción | 2MBx36 DRAM Simm Using 1MBx16 And 4MB Quad Cas Edo | |
| Fabricantes | Samsung Semiconductor | |
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DRAM MODULE
KMM5362205C2W/C2WG
2Mx36 DRAM SIMM
(1MX16 Base, Quad CAS EDO)
Revision 0.0
November 1997
- 1 - Rev. 0.0 (Nov. 1997)
1 page  
DRAM MODULE
KMM5362205C2W/C2WG
ABSOLUTE MAXIMUM RATINGS *
Item
Symbol
Rating
Unit
Voltage on any pin relative to V SS
Voltage on V CC supply relative to V SS
Storage Temperature
Power Dissipation
Short Circuit Output Current
VIN, VOUT
VCC
Tstg
Pd
IOS
-1 to +7.0
-1 to +7.0
-55 to +150
6
50
V
V
°C
W
mA
* Permanent device damage may occur if ABSOLUTE MAXIMUM RATINGS are exceeded. Functional operation should be restricted to
the conditions as detailed in the operational sections of this data sheet. Exposure to absolute maximum rating conditions for in tended
periods may affect device reliability.
RECOMMENDED OPERATING CONDITIONS (Voltage referenced to V SS, TA = 0 to 70°C)
Item
Supply Voltage
Ground
Input High Voltage
Input Low Voltage
*1 : VCC+2.0V/20ns, Pulse width is measured at VCC.
*2 : -2.0V/ 20ns, Pulse width is measured at VSS.
Symbol
VCC
VSS
VIH
VIL
Min
4.5
0
2.4
-1.0*2
Typ Max
5.0 5.5
00
- Vcc+1*1
- 0.8
Unit
V
V
V
V
DC AND OPERATING CHARACTERISTICS (Recommended operating conditions unless otherwise noted)
Symbol
Speed
KMM5322205C2W/C2WG
Min
ICC1
-5
-6
-
-
ICC2 Don′t care
-
ICC3
-5
-6
-
-
ICC4
-5
-6
-
-
ICC5 Don′t care
-
ICC6
-5
-6
-
-
II(L)
IO(L)
Don′t care
-30
-10
VOH
VOL
Don′t care
2.4
-
ICC1 : Operating Current * ( RAS, CAS, Address cycling @ tRC=min)
ICC2 : Standby Current ( RAS=CAS=W=VIH)
ICC3 : RAS Only Refresh Current * ( CAS=VIH, RAS cycling @ tRC=min)
ICC4 : EDO Mode Current * ( RAS=VIL, CAS cycling : tHPC=min)
ICC5 : Standby Current ( RAS=CAS=W=Vcc-0.2V)
ICC6 : CAS-Before-RAS Refresh Current * ( RAS and CAS cycling @ tRC=min)
II(L) : Input Leakage Current (Any input 0 ≤VIN≤Vcc+0.5V, all other pins not under test=0 V)
IO(L) : Output Leakage Current(Data Out is disabled, 0V ≤VOUT≤Vcc)
VOH : Output High Voltage Level (I OH = -5mA)
VOL : Output Low Voltage Level (I OL = 4.2mA)
Max
391
361
12
391
361
331
301
6
391
361
30
10
-
0.4
Unit
mA
mA
mA
mA
mA
mA
mA
mA
mA
mA
uA
uA
V
V
* NOTE : ICC1, ICC3, ICC4 and ICC6 are dependent on output loading and cycle rates. Specified values are obtained with the output open.
ICC is specified as an average current. In I CC1 and ICC3, address can be changed maximum once while RAS=VIL. In ICC4,
address can be changed maximum once within one EDO mode cycle, tHPC.
- 5 - Rev. 0.0 (Nov. 1997)
5 Page 
DRAM MODULE
HYPER PAGE WRITE CYCLE ( EARLY WRITE )
NOTE : DOUT = OPEN
KMM5362205C2W/C2WG
VIH -
RAS
VIL -
tRASP
¡ó
tRHCP
VIH -
CAS
VIL -
VIH -
A
VIL -
tCRP
tASR
tRCD
tRAD
tRAH
tCSH
tASC
tHPC
tCAS
tCAH
ROW
ADDR.
COLUMN
ADDRESS
tHPC
tCP tCP
tCAS
¡ó
tRSH
tCAS
tASC tCAH
COLUMN
ADDRESS
tASC tCAH
¡ó
COLUMN
¡ó ADDRESS
VIH -
W
VIL -
VIH -
DQ
VIL -
tWCS tWCH
tWP
tCWL
tDS tDH
VALID
DATA-IN
tWCS
tWCH
tWP
¡ó
tWCS tWCH
tWP
tCWL
tDS tDH
VALID
DATA-IN
tCWL
tRWL
tDS tDH
¡ó
VALID
¡ó DATA-IN
tRP
Don′t care
Undefined
- 11 -
Rev. 0.0 (Nov. 1997)
11 Page | ||
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| PDF Descargar | [ Datasheet KMM5362205C2W.PDF ] | |
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