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Número de pieza | KMM53616000CK | |
Descripción | 16MB X 36 DRAM Simm Using 16MB X 4 & 16MBx1 | |
Fabricantes | Samsung Semiconductor | |
Logotipo | ||
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No Preview Available ! DRAM MODULE
KMM53616000CK/CKG
4Byte 16Mx36 SIMM
(16Mx4 & 16Mx1 base)
Revision 0.0
June 1999
1 page DRAM MODULE
KMM53616000CK/CKG
ABSOLUTE MAXIMUM RATINGS *
Item
Symbol
Rating
Unit
Voltage on any pin relative to VSS
Voltage on VCC supply relative to VSS
Storage Temperature
Power Dissipation
Short Circuit Output Current
VIN, VOUT
VCC
Tstg
Pd
IOS
-1 to +7.0
-1 to +7.0
-55 to +125
12
50
V
V
°C
W
mA
* Permanent device damage may occur if ABSOLUTE MAXIMUM RATINGS are exceeded. Functional operation should be restricted to
the conditions as detailed in the operational sections of this data sheet. Exposure to absolute maximum rating conditions for intended
periods may affect device reliability.
RECOMMENDED OPERATING CONDITIONS (Voltage referenced to VSS, TA = 0 to 70°C)
Item
Symbol
Min
Typ
Max
Supply Voltage
Ground
Input High Voltage
Input Low Voltage
VCC
4.5
5.0
5.5
VSS 0 0 0
VIH 2.4
- VCC*1
VIL -1.0*2
-
0.8
*1 : VCC+2.0V at pulse width≤ 20ns, which is measured at VCC.
*2 : -2.0V at pulse width≤ 20ns, whcih is measured at VSS.
Unit
V
V
V
V
DC AND OPERATING CHARACTERISTICS (Recommended operating conditions unless otherwise noted)
Symbol
Speed
KMM53616000CK/CKG
Min
ICC1
-5
-6
-
-
ICC2
Don′t care
-
ICC3
-5
-6
-
-
ICC4
-5
-6
-
-
ICC5
Don′t care
-
ICC6
-5
-6
-
-
II(L)
IO(L)
Don′t care
-10
-5
VOH
VOL
Don′t care
2.4
-
ICC1 : Operating Current * (RAS, CAS, Address cycling @tRC=min)
ICC2 : Standby Current (RAS=CAS=W=VIH)
ICC3 : RAS Only Refresh Current * (CAS=VIH, RAS cycling @tRC=min)
ICC4 : Fast Page Mode Current * (RAS=VIL, CAS cycling : tPC=min)
ICC5 : Standby Current (RAS=CAS=W=Vcc-0.2V)
ICC6 : CAS-Before-RAS Refresh Current * (RAS and CAS cycling @tRC=min)
I(IL) : Input Leakage Current (Any input 0≤VIN≤Vcc+0.5V, all other pins not under test=0 V)
I(OL) : Output Leakage Current(Data Out is disabled, 0V≤VOUT≤Vcc)
VOH : Output High Voltage Level (IOH = -5mA)
VOL : Output Low Voltage Level (IOL = 4.2mA)
Max
1320
1200
24
1320
1200
880
760
12
1320
1200
10
5
-
0.4
Unit
mA
mA
mA
mA
mA
mA
mA
mA
mA
mA
uA
uA
V
V
* NOTE : ICC1, ICC3, ICC4 and ICC6 are dependent on output loading and cycle rates. Specified values are obtained with the output open.
ICC is specified as an average current. In ICC1 and ICC3, address can be changed maximum once while RAS=VIL. In ICC4,
address can be changed maximum once within one Fast page mode cycle time,tPC.
5 Page DRAM MODULE
READ - MODIFY - WRTIE CYCLE
KMM53616000CK/CKG
VIH -
RAS
VIL -
VIH -
CAS
VIL -
VIH -
A
VIL -
VIH -
W
VIL -
VIH -
OE
VIL -
VI/OH -
DQ
VI/OL -
tRAS
tRWC
tRP
tCRP
tRCD
tASR
tRAD
tRAH
tASC
tCAH
ROW
ADDR
COLUMN
ADDRESS
tRSH
tCAS
tCSH
tAWD
tCWD
tRWD
tOEA
tRWL
tCWL
tWP
tCLZ
tCAC
tAA
tRAC
tOED
tOEZ
VALID
DATA-OUT
tDS tDH
VALID
DATA-IN
Don′t care
Undefined
11 Page |
Páginas | Total 20 Páginas | |
PDF Descargar | [ Datasheet KMM53616000CK.PDF ] |
Número de pieza | Descripción | Fabricantes |
KMM53616000CK | 16MB X 36 DRAM Simm Using 16MB X 4 & 16MBx1 | Samsung Semiconductor |
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