PDF KMM5364103CK Data sheet ( Hoja de datos )

Número de pieza	KMM5364103CK
Descripción	(KMM5364103CK / KMM5364003CK) 4MBx36 DRAM Simm Using 4MBx4 And 16MB Quad Cas
Fabricantes	Samsung Semiconductor
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No Preview Available ! DRAM MODULE KMM5364003CK/CKG KMM5364103CK/CKG 4Byte 4Mx36 SIMM (4Mx4 & 16M Quad CAS base) Revision 0.1 Nov. 1997 1 page DRAM MODULE KMM5364003CK/CKG KMM5364103CK/CKG ABSOLUTE MAXIMUM RATINGS * Item Symbol Rating Unit Voltage on any pin relative to V SS Voltage on V CC supply relative to V SS Storage Temperature Power Dissipation Short Circuit Output Current VIN, VOUT VCC Tstg Pd IOS -1 to +7.0 -1 to +7.0 -55 to +150 9 50 V V °C W mA * Permanent device damage may occur if ABSOLUTE MAXIMUM RATINGS are exceeded. Functional operation should be restricted to the conditions as detailed in the operational sections of this data sheet. Exposure to absolute maximum rating conditions for in tended periods may affect device reliability. RECOMMENDED OPERATING CONDITIONS (Voltage referenced to V SS, TA = 0 to 70°C) Supply Voltage Ground Input High Voltage Input Low Voltage Item Symbol VCC VSS VIH VIL Min 4.5 0 2.4 -1.02 Typ Max 5.0 5.5 00 - VCC+11 - 0.8 1 : VCC+2.0V/20ns, Pulse width is measured at VCC. 2 : -2.0V/ 20ns, Pulse width is measured at VSS. Unit V V V V DC AND OPERATING CHARACTERISTICS (Recommended operating conditions unless otherwise noted) Symbol ICC1 ICC2 ICC3 ICC4 ICC5 ICC6 II(L) IO(L) VOH VOL Speed -5 -6 Don′t care -5 -6 -5 -6 Don′t care -5 -6 Don′t care Don′t care KMM5364003CK/CKG Min Max - 810 - 720 - 18 - 810 - 720 - 720 - 630 -9 - 810 - 720 -45 45 -5 5 2.4 - - 0.4 KMM5364103CK/CKG Min Max - 990 - 900 - 18 - 990 - 900 - 810 - 720 -9 - 990 - 900 -45 45 -5 5 2.4 - - 0.4 Unit mA mA mA mA mA mA mA mA mA mA uA uA V V ICC1 : Operating Current * ( RAS, CAS, Address cycling @ tRC=min) ICC2 : Standby Current ( RAS=CAS=W=VIH) ICC3 : RAS Only Refresh Current * ( CAS=VIH, RAS cycling @ tRC=min) ICC4 : Fast Page Mode Current * ( RAS=VIL, CAS Address cycling : tPC=min) ICC5 : Standby Current ( RAS=CAS=W=Vcc-0.2V) ICC6 : CAS-Before-RAS Refresh Current * ( RAS and CAS cycling @ tRC=min) II(L) : Input Leakage Current (Any input 0 ≤VIN≤Vcc+0.5V, all other pins not under test=0 V) IO(L) : Output Leakage Current(Data Out is disabled, 0V ≤VOUT≤Vcc) VOH : Output High Voltage Level (I OH = -5mA) VOL : Output Low Voltage Level (I OL = 4.2mA) * NOTE : ICC1, ICC3, ICC4 and ICC6 are dependent on output loading and cycle rates. Specified values are obtained with the output open. ICC is specified as an average current. In I CC1 and ICC3, address can be changed maximum once while RAS=VIL. In ICC4, address can be changed maximum once within one page mode cycle, tPC. 5 Page DRAM MODULE FAST PAGE WRITE CYCLE ( EARLY WRITE ) NOTE : DOUT = OPEN KMM5364003CK/CKG KMM5364103CK/CKG VIH - RAS VIL - VIH - CAS VIL - VIH - A VIL - VIH - W VIL - VIH - DQ VIL - tRASP tRHCP tCRP tASR tRCD tRAD tASC tRAH tPC tCAS tCSH tCAH ROW ADDR COLUMN ADDRESS ¡ó tPC tCP tCP tCAS ¡ó tRSH tCAS tASC tCAH COLUMN ADDRESS tASC tCAH ¡ó COLUMN ADDRESS ¡ó tWCS tWCH tWP tWCS tWCH tWCS ¡ó tWP tWCH tWP tCWL tDS tDH VALID DATA-IN tCWL tDS tDH VALID DATA-IN ¡ó ¡ó tCWL tRWL tDS tDH VALID DATA-IN tRP Don′t care Undefined 11 Page

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Número de pieza	Descripción	Fabricantes
KMM5364103CK	(KMM5364103CK / KMM5364003CK) 4MBx36 DRAM Simm Using 4MBx4 And 16MB Quad Cas	Samsung Semiconductor

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