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PDF KMM5364005CSW Data sheet ( Hoja de datos )
| Número de pieza | KMM5364005CSW | |
| Descripción | 4MB X 36 DRAM Simm Using 4MB X 16 & Quad Cas 4MB X 4 | |
| Fabricantes | Samsung Semiconductor | |
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DRAM MODULE
KMM5364005CSW/CSWG
4Byte 4Mx36 SIMM
(4Mx16 & Quad CAS 4Mx4 base)
Revision 0.0
June 1999
1 page  
DRAM MODULE
KMM5364005CSW/CSWG
ABSOLUTE MAXIMUM RATINGS *
Item
Symbol
Rating
Unit
Voltage on any pin relative to VSS
Voltage on VCC supply relative to VSS
Storage Temperature
Power Dissipation
Short Circuit Output Current
VIN, VOUT
VCC
Tstg
Pd
IOS
-1 to +7.0
-1 to +7.0
-55 to +125
3
50
V
V
°C
W
mA
* Permanent device damage may occur if ABSOLUTE MAXIMUM RATINGS are exceeded. Functional operation should be restricted to
the conditions as detailed in the operational sections of this data sheet. Exposure to absolute maximum rating conditions for intended
periods may affect device reliability.
RECOMMENDED OPERATING CONDITIONS (Voltage referenced to VSS, TA = 0 to 70°C)
Item
Symbol
Min
Typ
Max
Supply Voltage
Ground
Input High Voltage
Input Low Voltage
VCC
4.5
5.0
5.5
VSS 0 0 0
VIH 2.4
- VCC*1
VIL -1.0*2
-
0.8
*1 : VCC+2.0V at pulse width≤20ns, which is measured at VCC.
*2 : -2.0V at pulse width≤ 20ns, which is measured at VSS.
Unit
V
V
V
V
DC AND OPERATING CHARACTERISTICS (Recommended operating conditions unless otherwise noted)
Symbol
Speed
KMM5364005CSW/CSWG
Min Max
Unit
ICC1
ICC2
ICC3
ICC4
ICC5
ICC6
-5
-6
Don′t care
-5
-6
-5
-6
Don′t care
-5
-6
-
-
-
-
-
-
-
-
-
-
330 mA
300 mA
6 mA
330 mA
300 mA
260 mA
230 mA
3 mA
330 mA
300 mA
II(L)
IO(L)
VOH
VOL
Don′t care
Don′t care
-10
-5
2.4
-
10 uA
5 uA
-V
0.4 V
ICC1 : Operating Current * (RAS, CAS, Address cycling @tRC=min)
ICC2 : Standby Current (RAS=CAS=W=VIH)
ICC3 : RAS Only Refresh Current * (CAS=VIH, RAS cycling @tRC=min)
ICC4 : Hyper Page Mode Current * (RAS=VIL, CAS cycling : tHPC=min)
ICC5 : Standby Current (RAS=CAS=W=Vcc-0.2V)
ICC6 : CAS-Before-RAS Refresh Current * (RAS and CAS cycling @tRC=min)
I(IL) : Input Leakage Current (Any input 0≤VIN≤Vcc+0.5V, all other pins not under test=0 V)
I(OL) : Output Leakage Current(Data Out is disabled, 0V≤VOUT≤Vcc)
VOH : Output High Voltage Level (IOH = -5mA)
VOL : Output Low Voltage Level (IOL = 4.2mA)
* NOTE : ICC1, ICC3, ICC4 and ICC6 are dependent on output loading and cycle rates. Specified values are obtained with the output open.
ICC is specified as an average current. In ICC1 and ICC3, address can be changed maximum once while RAS=VIL. In ICC4,
address can be changed maximum once within one EDO mode cycle time, tHPC.
5 Page 
DRAM MODULE
READ - MODIFY - WRITE CYCLE
KMM5364005CSW/CSWG
VIH -
RAS
VIL -
VIH -
CAS
VIL -
VIH -
A
VIL -
VIH -
W
VIL -
VIH -
OE
VIL -
VI/OH -
DQ
VI/OL -
tRAS
tRWC
tRP
tCRP
tRCD
tASR
tRAD
tRAH
tASC
tCAH
ROW
ADDR
COLUMN
ADDRESS
tRSH
tCAS
tCSH
tAWD
tCWD
tRWD
tOEA
tRWL
tCWL
tWP
tOLZ
tCLZ
tCAC
tAA
tRAC
tOED
tOEZ
VALID
DATA-OUT
tDS tDH
VALID
DATA-IN
Don′t care
Undefined
11 Page | ||
| Páginas | Total 21 Páginas | |
| PDF Descargar | [ Datasheet KMM5364005CSW.PDF ] | |
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