PDF KMM5364003CSW Data sheet ( Hoja de datos )

Número de pieza	KMM5364003CSW
Descripción	4MB X 36 DRAM Simm Using 4MB X 16 & Quad Cas 4MBx4
Fabricantes	Samsung Semiconductor
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No Preview Available ! DRAM MODULE KMM5364003CSW/CSWG 4Byte 4Mx36 SIMM (4Mx16 & Quad CAS 4Mx4 base) Revision 0.0 June 1999 1 page DRAM MODULE KMM5364003CSW/CSWG ABSOLUTE MAXIMUM RATINGS * Item Voltage on any pin relative to VSS Voltage on VCC supply relative to VSS Storage Temperature Power Dissipation Short Circuit Output Current Symbol VIN, VOUT VCC Tstg Pd IOS Rating -1 to +7.0 -1 to +7.0 -55 to +125 3 50 Unit V V °C W mA * Permanent device damage may occur if ABSOLUTE MAXIMUM RATINGS are exceeded. Functional operation should be restricted to the conditions as detailed in the operational sections of this data sheet. Exposure to absolute maximum rating conditions for intended periods may affect device reliability. RECOMMENDED OPERATING CONDITIONS (Voltage referenced to VSS, TA = 0 to 70°C) Item Symbol Min Typ Max Supply Voltage Ground Input High Voltage Input Low Voltage VCC 4.5 5.0 5.5 VSS 0 0 0 VIH 2.4 - VCC1 VIL -1.02 - 0.8 1 : VCC+2.0V at pulse width≤20ns, which is measured at VCC. 2 : -2.0V at pulse width≤20ns, which is measured at VSS. Unit V V V V DC AND OPERATING CHARACTERISTICS (Recommended operating conditions unless otherwise noted) Symbol ICC1 ICC2 ICC3 ICC4 ICC5 ICC6 II(L) IO(L) VOH VOL Speed -5 -6 Don′t care -5 -6 -5 -6 Don′t care -5 -6 Don′t care Don′t care KMM5364003CSW/CSWG Min Max - 330 - 300 -6 - 330 - 300 - 220 - 190 -3 - 330 - 300 -10 10 -5 5 2.4 - - 0.4 Unit mA mA mA mA mA mA mA mA mA mA uA uA V V ICC1 : Operating Current * (RAS, CAS, Address cycling @tRC=min) ICC2 : Standby Current (RAS=CAS=W=VIH) ICC3 : RAS Only Refresh Current * (CAS=VIH, RAS cycling @tRC=min) ICC4 : Fast Page Mode Current * (RAS=VIL, CAS cycling : tPC=min) ICC5 : Standby Current (RAS=CAS=W=Vcc-0.2V) ICC6 : CAS-Before-RAS Refresh Current * (RAS and CAS cycling @tRC=min) I(IL) : Input Leakage Current (Any input 0≤VIN≤Vcc+0.5V, all other pins not under test=0 V) I(OL) : Output Leakage Current(Data Out is disabled, 0V≤VOUT≤Vcc) VOH : Output High Voltage Level (IOH = -5mA) VOL : Output Low Voltage Level (IOL = 4.2mA) * NOTE : ICC1, ICC3, ICC4 and ICC6 are dependent on output loading and cycle rates. Specified values are obtained with the output open. ICC is specified as an average current. In ICC1 and ICC3, address can be changed maximum once while RAS=VIL. In ICC4, address can be changed maximum once within one Fast page mode cycle time, tPC. 5 Page DRAM MODULE READ - MODIFY - WRTIE CYCLE KMM5364003CSW/CSWG VIH - RAS VIL - VIH - CAS VIL - VIH - A VIL - VIH - W VIL - VIH - OE VIL - VI/OH - DQ VI/OL - tRWC tRAS tRP tCRP tRCD tASR tRAD tRAH tASC tCAH ROW ADDR COLUMN ADDRESS tRSH tCAS tCSH tAWD tCWD tRWD tOEA tRWL tCWL tWP tCLZ tCAC tAA tRAC tOED tOEZ VALID DATA-OUT tDS tDH VALID DATA-IN Don′t care Undefined 11 Page

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