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PDF 2SC4815 Data sheet ( Hoja de datos )
| Número de pieza | 2SC4815 | |
| Descripción | NPN SILICON EPITAXIAL TRANSISTOR FOR HIGH-SPEED SWITCHING | |
| Fabricantes | NEC | |
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DATA SHEET
SILICON POWER TRANSISTOR
2SC4815
NPN SILICON EPITAXIAL TRANSISTOR
FOR HIGH-SPEED SWITCHING
The 2SC4815 is a power transistor developed for high-speed switching and features low VCE(sat) and high hFE.
This transistor is ideal for use as a driver in DC/DC converters and actuators.
In addition, this transistor is available for the auto mount in the radial taping specifications and for mounting cost
reduction.
FEATURES
• High hFE and low VCE(sat):
VCE(sat) ≤ 0.3 V @IC = 3.0 A, IB = 0.15 A
hFE ≥ 100
@VCE = 2.0 V, IC = 1.0 A
• Available for auto mount in radial taping specifications
ABSOLUTE MAXIMUM RATINGS (Ta = 25°C)
Parameter
Symbol
Collector to base voltage
VCBO
Collector to emitter voltage
VCEO
Emitter to base voltage
VEBO
Collector current (DC)
IC(DC)
Collector current (pulse)
IC(pulse)*
Base current (DC)
IB(DC)
Total power dissipation
PT
Junction temperature
Tj
Storage temperature
Tstg
* PW ≤ 300 µs, duty cycle ≤ 10%
Ratings
100
60
7.0
5.0
10
2.5
1.8
150
−55 to +150
Unit
V
V
V
A
A
A
W
°C
°C
The information in this document is subject to change without notice. Before using this document, please
confirm that this is the latest version.
Not all devices/types available in every country. Please check with local NEC representative for
availability and additional information.
Document No. D15605EJ3V0DS00 (3rd edition)
Date Published April 2002 N CP(K)
Printed in Japan
©
21090928
1 page  
SWITCHING TIME (ton, tstg, tf) TEST CIRCUIT
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2SC4815
Data Sheet D15605EJ3V0DS
5
5 Page | ||
| Páginas | Total 6 Páginas | |
| PDF Descargar | [ Datasheet 2SC4815.PDF ] | |
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