|
|
PDF P7NB80FP Data sheet ( Hoja de datos )
| Número de pieza | P7NB80FP | |
| Descripción | STP7NB80 | |
| Fabricantes | ST Microelectronics | |
| Logotipo |  |
|
Hay una vista previa y un enlace de descarga de P7NB80FP (archivo pdf) en la parte inferior de esta página. Total 9 Páginas | ||
|
No Preview Available !
www.DataSheet4U.com
STP7NB80
® STP7NB80FP
N - CHANNEL 800V - 1.2Ω - 6.5A - TO-220/TO-220FP
PowerMESH™ MOSFET
TYPE
VDSS
RDS(on)
ID
ST P7N B80
ST P7N B80 FP
800 V
800 V
< 1.5 Ω
< 1.5 Ω
6.5 A
6.5 A
s TYPICAL RDS(on) = 1.2 Ω
s EXTREMELY HIGH dv/dt CAPABILITY
s 100% AVALANCHE TESTED
s VERY LOW INTRINSIC CAPACITANCES
s GATE CHARGE MINIMIZED
DESCRIPTION
Using the latest high voltage MESH OVERLAY™
process, STMicroelectronics has designed an
advanced family of power MOSFETs with
outstanding performances. The new patent
pending strip layout coupled with the Company’s
proprietary edge termination structure, gives the
lowest RDS(on) per area, exceptional avalanche
and dv/dt capabilities and unrivalled gate charge
and switching characteristics.
APPLICATIONS
s HIGH CURRENT, HIGH SPEED SWITCHING
s SWITCH MODE POWER SUPPLIES (SMPS)
s DC-AC CONVERTERS FOR WELDING
EQUIPMENT AND UNINTERRUPTIBLE
POWER SUPPLIES AND MOTOR DRIVE
ABSOLUTE MAXIMUM RATINGS
Sy mb o l
Parameter
VDS Drain-source Volt age (VGS = 0)
V DGR
VGS
ID
ID
IDM (•)
Ptot
Drain- gate Voltage (RGS = 20 kΩ)
Gate-source Voltage
Drain Current (continuous) at Tc = 25 oC
Drain Current (continuous) at Tc = 100 oC
Drain Current (pulsed)
Total Dissipation at Tc = 25 oC
Derating Factor
dv/dt(1) Peak Diode Recovery voltage slope
VISO
Ts tg
Insulation Withstand Voltage (DC)
Storage Temperature
Tj Max. Operating Junction Temperature
(•) Pulse width limited by safe operating area
( *) Limited only maximum temperature allowed
April 1999
3
2
1
TO-220
3
2
1
TO-220FP
INTERNAL SCHEMATIC DIAGRAM
Value
Un it
STP7NB80 STP7NB80FP
800 V
800 V
± 30
V
6.5
6. 5 (* )
A
4.1
4. 1 (* )
A
26 26 A
135
1.08
40
0.32
W
W /o C
4.5 4.5 V/ns
--
2000
oC
-65 to 150
oC
150 oC
( 1) ISD ≤ 6.5A, di/dt ≤ 200 A/µs, VDD ≤ V(BR)DSS, Tj ≤ TJMAX
1/9
1 page  
www.DataSheet4U.com
Gate Charge vs Gate-source Voltage
Capacitance Variations
STP7NB80/FP
Normalized Gate Threshold Voltage vs
Temperature
Normalized On Resistance vs Temperature
Source-drain Diode Forward Characteristics
5/9
5 Page | ||
| Páginas | Total 9 Páginas | |
| PDF Descargar | [ Datasheet P7NB80FP.PDF ] | |
Hoja de datos destacado
| Número de pieza | Descripción | Fabricantes |
| P7NB80FP | STP7NB80 | ST Microelectronics |
| Número de pieza | Descripción | Fabricantes |
| SLA6805M | High Voltage 3 phase Motor Driver IC. |
 Sanken |
| SDC1742 | 12- and 14-Bit Hybrid Synchro / Resolver-to-Digital Converters. |
 Analog Devices |
|
DataSheet.es es una pagina web que funciona como un repositorio de manuales o hoja de datos de muchos de los productos más populares, |
| DataSheet.es | 2020 | Privacy Policy | Contacto | Buscar |