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PDF SD1012-03 Datasheet ( Hoja de datos )

Número de pieza SD1012-03
Descripción RF & MICROWAVE TRANSISTORS
Fabricantes Microsemi Corporation 
Logotipo Microsemi Corporation Logotipo



Total 4 Páginas
		
SD1012-03 Hoja de datos, Descripción, Manual
RF PRODUCTS DIVISION
SD1012-03
RF & MICROWAVE TRANSISTORS
PRODUCT PREVIEW
DESCRIPTION
The SD1012-03 is a 12.5 V Class C epitaxial silicon NPN planar
transistor designed primarily for VHF communications in the 36 – 175
MHz frequency range. Emitter ballasting is employed to achieve
excellent ruggedness under severe load mismatch conditions.
IMPORTANT: For the most current data, consult MICROSEMI’s website: http://www.microsemi.com
KEY FEATURES
!"175 MHz
!"12.5 Volts
!"Efficiency 50%
!"Common Emitter
!"POUT = 6 W Min.
!"GP = 9 dB Gain
APPLICATIONS/BENEFITS
!"VHF Mobile
Applications
Symbol
VCBO
VCEO
VCES
VEBO
IC
PDISS
TJ
TSTG
ABSOLUTE MAXIMUM RATINGS (TCASE = 25°C)
Parameter
Value
Collector-Base Voltage
36
Collector-Emitter Voltage
18
Collector-Emitter Voltage
36
Emitter-Base Voltage
4.0
Device Current
1.8
Power Dissipation (+25°C)
20
Junction Temperature
+200
Storage Temperature
-65 to +150
Unit
V
V
V
V
A
W
°C
°C
THERMAL DATA
RTH(j-c) Junction-Case Thermal Resistance 8.75 °C/W
Copyright 2000
MSC1626.PDF 2000-11-26
Microsemi
RF Products Division
140 Commerce Drive, Montgomeryville PA 18936, (215) 631-9840, Fax: (215) 631-9855
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