(PDF) SD1012-03 Datasheet - RF & MICROWAVE TRANSISTORS

Número de pieza	SD1012-03
Descripción	RF & MICROWAVE TRANSISTORS
Fabricantes	Microsemi Corporation
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No Preview Available ! RF PRODUCTS DIVISION SD1012-03 RF & MICROWAVE TRANSISTORS PRODUCT PREVIEW DESCRIPTION The SD1012-03 is a 12.5 V Class C epitaxial silicon NPN planar transistor designed primarily for VHF communications in the 36 – 175 MHz frequency range. Emitter ballasting is employed to achieve excellent ruggedness under severe load mismatch conditions. IMPORTANT: For the most current data, consult MICROSEMI’s website: http://www.microsemi.com KEY FEATURES !"175 MHz !"12.5 Volts !"Efficiency 50% !"Common Emitter !"POUT = 6 W Min. !"GP = 9 dB Gain APPLICATIONS/BENEFITS !"VHF Mobile Applications Symbol VCBO VCEO VCES VEBO IC PDISS TJ TSTG ABSOLUTE MAXIMUM RATINGS (TCASE = 25°C) Parameter Value Collector-Base Voltage 36 Collector-Emitter Voltage 18 Collector-Emitter Voltage 36 Emitter-Base Voltage 4.0 Device Current 1.8 Power Dissipation (+25°C) 20 Junction Temperature +200 Storage Temperature -65 to +150 Unit V V V V A W °C °C THERMAL DATA RTH(j-c) Junction-Case Thermal Resistance 8.75 °C/W Copyright  2000 MSC1626.PDF 2000-11-26 Microsemi RF Products Division 140 Commerce Drive, Montgomeryville PA 18936, (215) 631-9840, Fax: (215) 631-9855 Page 1 1 page

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PDF SD1012-03 Data sheet ( Hoja de datos )