DataSheet.es    


PDF 2SB1470 Data sheet ( Hoja de datos )

Número de pieza 2SB1470
Descripción For Power Amplification
Fabricantes Panasonic Semiconductor 
Logotipo Panasonic Semiconductor Logotipo



Hay una vista previa y un enlace de descarga de 2SB1470 (archivo pdf) en la parte inferior de esta página.


Total 4 Páginas

No Preview Available ! 2SB1470 Hoja de datos, Descripción, Manual

Power Transistors
2SB1470
Silicon PNP triple diffusion planar type darlington
For power amplification
Complementary to 2SD2222
20.0±0.5
φ 3.3±0.2
Unit: mm
5.0±0.3
(3.0)
Features
Optimum for 120 W HiFi output
High forward current transfer ratio hFE
Low collector-emitter saturation voltage VCE(sat)
Absolute Maximum Ratings TC = 25°C
Parameter
Symbol Rating
Collector-base voltage (Emitter open)
Collector-emitter voltage (Base open)
Emitter-base voltage (Collector open)
Collector current
Peak collector current
Collector power dissipation
Junction temperature
Ta = 25°C
Storage temperature
VCBO
VCEO
VEBO
IC
ICP
PC
Tj
Tstg
160
160
5
8
15
150
3.5
150
55 to +150
Unit
V
V
V
A
A
W
°C
°C
(1.5)
2.0±0.3
3.0±0.3
1.0±0.2
5.45±0.3
10.9±0.5
(1.5)
2.7±0.3
0.6±0.2
123
1: Base
2: Collector
3: Emitter
TOP-3L-A1 Package
Internal Connection
B
C
E
Electrical Characteristics TC = 25°C ± 3°C
Parameter
Symbol
Conditions
Min Typ Max Unit
Collector-emitter voltage (Base open)
Collector-base cutoff current (Emitter open)
Collector-emitter cutoff current (Base open)
Emitter-base cutoff current (Collector open)
Forward current transfer ratio
Collector-emitter saturation voltage
Base-emitter saturation voltage
Transition frequency
Turn-on time
Storage time
Fall time
VCEO
ICBO
ICEO
IEBO
hFE1
hFE2 *
VCE(sat)
VBE(sat)
fT
ton
tstg
tf
IC = −30 mA, IB = 0
VCB = −160 V, IE = 0
VCE = −160 V, IB = 0
VEB = −5 V, IC = 0
VCE = −5 V, IC = −1 A
VCE = −5 V, IC = −7 A
IC = −7 A, IB = −7 mA
IC = −7 A, IB = −7 mA
VCE = −10 V, IC = − 0.5 A, f = 1 MHz
IC = −7 A, IB1 = −7 mA, IB2 = 7 mA
VCC = −50 V
160
1 000
3 500
V
100 µA
100 µA
100 µA
20 000
3 V
3 V
20 MHz
1.0 µs
1.5 µs
1.2 µs
Note) 1. Measuring methods are based on JAPANESE INDUSTRIAL STANDARD JIS C 7030 measuring methods for transistors.
2. *: Rank classification
Rank
Q
S
P
hFE2 3 500 to 10 000 5 000 to 15 000 7 000 to 20 000
Publication date: March 2003
SJD00076BED
1

1 page





PáginasTotal 4 Páginas
PDF Descargar[ Datasheet 2SB1470.PDF ]




Hoja de datos destacado

Número de piezaDescripciónFabricantes
2SB1470For Power AmplificationPanasonic Semiconductor
Panasonic Semiconductor
2SB1470SILICON POWER TRANSISTORSavantIC
SavantIC
2SB1471PNP/NPN Epitaxial Planar Silicon TransistorsSanyo Semicon Device
Sanyo Semicon Device
2SB1472PNP/NPN Epitaxial Planar Silicon TransistorsSanyo Semicon Device
Sanyo Semicon Device

Número de piezaDescripciónFabricantes
SLA6805M

High Voltage 3 phase Motor Driver IC.

Sanken
Sanken
SDC1742

12- and 14-Bit Hybrid Synchro / Resolver-to-Digital Converters.

Analog Devices
Analog Devices


DataSheet.es es una pagina web que funciona como un repositorio de manuales o hoja de datos de muchos de los productos más populares,
permitiéndote verlos en linea o descargarlos en PDF.


DataSheet.es    |   2020   |  Privacy Policy  |  Contacto  |  Buscar