|
|
PDF STE53NA50 Data sheet ( Hoja de datos )
| Número de pieza | STE53NA50 | |
| Descripción | N - CHANNEL ENHANCEMENT MODE FAST POWER MOS TRANSISTOR | |
| Fabricantes | ST Microelectronics | |
| Logotipo |  |
|
Hay una vista previa y un enlace de descarga de STE53NA50 (archivo pdf) en la parte inferior de esta página. Total 7 Páginas | ||
|
No Preview Available !
STE53NA50
N - CHANNEL ENHANCEMENT MODE
FAST POWER MOS TRANSISTOR
TYPE
ST E53NA50
VDSS
500 V
RDS(on)
< 0.085 Ω
ID
53 A
s TYPICAL RDS(on) = 0.075 Ω
s HIGH CURRENT POWER MODULE
s AVALANCHE RUGGED TECHNOLOGY
s VERY LARGE SOA - LARGE PEAK POWER
CAPABILITY
s EASY TO MOUNT
s SAME CURRENT CAPABILITY FOR THE
TWO SOURCE TERMINALS
s EXTREMELY LOW Rth (Junction to case)
s VERY LOW INTERNAL PARASITIC
INDUCTANCE
s ISOLATED PACKAGE UL RECOGNIZED
APPLICATIONS
s SMPS & UPS
s MOTOR CONTROL
s WELDING EQUIPMENT
s OUTPUT STAGE FOR PWM, ULTRASONIC
CIRCUITS
ISOTOP
INTERNAL SCHEMATIC DIAGRAM
ABSOLUTE MAXIMUM RATINGS
Symbol
Parameter
VDS Drain-source Voltage (VGS = 0)
V D GR
V GS
ID
ID
Drain- gate Voltage (RGS = 20 kΩ)
Gate-source Voltage
Drain Current (continuous) at Tc = 25 oC
Drain Current (continuous) at Tc = 100 oC
IDM(•) Drain Current (pulsed)
Pto t Total Dissipation at Tc = 25 oC
Derating Factor
Tst g St orage Temperature
Tj Max. Operating Junction Temperature
VISO Insulation Withhstand Voltage (AC-RMS)
(•) Pulse width limited by safe operating area
February 1998
Va l u e
500
500
± 30
53
33
212
460
3.68
-55 to 150
150
2500
Unit
V
V
V
A
A
A
W
W/oC
oC
oC
V
1/7
1 page  
Normalized Gate Threshold Voltage vs
Temperature
STE53NA50
Normalized On Resistance vs Temperature
Source-drain Diode Forward Characteristics
Fig. 1: Switching Times Test Circuits For
Resistive Load
Fig. 2: Gate Charge test Circuit
Fig. 3: Test Circuit For Inductive Load Switching
And Diode Recovery Times
5/7
5 Page | ||
| Páginas | Total 7 Páginas | |
| PDF Descargar | [ Datasheet STE53NA50.PDF ] | |
Hoja de datos destacado
| Número de pieza | Descripción | Fabricantes |
| STE53NA50 | N - CHANNEL ENHANCEMENT MODE FAST POWER MOS TRANSISTOR | ST Microelectronics |
| STE53NA50 | Trans MOSFET N-CH 500V 53A 4-Pin ISOTOP |  New Jersey Semiconductor |
| Número de pieza | Descripción | Fabricantes |
| SLA6805M | High Voltage 3 phase Motor Driver IC. |
 Sanken |
| SDC1742 | 12- and 14-Bit Hybrid Synchro / Resolver-to-Digital Converters. |
 Analog Devices |
|
DataSheet.es es una pagina web que funciona como un repositorio de manuales o hoja de datos de muchos de los productos más populares, |
| DataSheet.es | 2020 | Privacy Policy | Contacto | Buscar |