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PDF KMM372C883CS Data sheet ( Hoja de datos )
| Número de pieza | KMM372C883CS | |
| Descripción | DRAM Module | |
| Fabricantes | Samsung Semiconductor | |
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DRAM MODULE
KMM372C80(8)3CK/CS
Buffered 8Mx72 DIMM
(8Mx8 base)
Revision 0.0
June 1999
1 page  
DRAM MODULE
KMM372C80(8)3CK/CS
ABSOLUTE MAXIMUM RATINGS *
Item
Symbol
Rating
Unit
Voltage on any pin relative VSS
Voltage on VCC supply relative to VSS
Storage Temperature
Power Dissipation
Short Circuit Output Current
VIN, VOUT
VCC
Tstg
PD
IOS
-1 to +7.0
-1 to +7.0
-55 to +125
9
50
V
V
°C
W
mA
* Permanent device damage may occur if ABSOLUTE MAXIMUM RATINGS are exceeded. Functional operation should be restricted to
the conditions as detailed in the operational sections of this data sheet. Exposure to absolute maximum rating conditions for intended
periods may affect device reliability.
RECOMMENDED OPERATING CONDITIONS (Voltage referenced to VSS, TA = 0 to 70°C)
Item
Symbol
Min
Typ
Max
Supply Voltage
Ground
Input High Voltage
Input Low Voltage
VCC
4.5
5.0
5.5
VSS
0
0
0
VIH 2.4
- VCC*1
VIL -1.0*2
-
0.8
*1 : VCC+2.0V at pulse width≤20ns, which is measured at VCC.
*2 : -2.0V at pulse width≤20ns, which is measured at VSS.
Unit
V
V
V
V
DC AND OPERATING CHARACTERISTICS (Recommended operating conditions unless otherwise noted)
Symbol
Speed
KMM372C803CK/CS
Min Max
KMM372C883CK/CS
Min Max
ICC1
-5
-6
- 1080
-- 990
-
-
810
720
ICC2 Don′t care
-
100
-
100
ICC3
-5
-6
- 1080 -
- 990 -
810
720
ICC4
-5
-6
-
-
630
540
-
-
540
450
ICC5 Don′t care
-
30
-
30
ICC6
-5
-6
- 1080 -
- 990 -
810
720
II(L)
IO(L)
Don′t care
-10
-5
10
5
-10
-5
10
5
VOH
VOL
Don′t care
2.4
-
-
0.4
2.4
-
-
0.4
ICC1*: Operating Current * (RAS, CAS, Address cycling @tRC=min)
ICC2 : Standby Current (RAS=CAS=W=VIH)
ICC3*: RAS Only Refresh Current * (CAS=VIH, RAS cycling @tRC=min)
ICC4*: Fast Page Mode Current * (RAS=VIL, CAS cycling : tPC=min)
ICC5 : Standby Current (RAS=CAS=W=Vcc-0.2V)
ICC6*: CAS-Before-RAS Refresh Current * (RAS and CAS cycling @tRC=min)
I(IL) : Input Leakage Current (Any input 0≤VIN≤Vcc+0.5V, all other pins not under test=0 V)
I(OL) : Output Leakage Current(Data Out is disabled, 0V≤VOUT≤Vcc)
VOH : Output High Voltage Level (IOH = -5mA)
VOL : Output Low Voltage Level (IOL = 4.2mA)
Unit
mA
mA
mA
mA
mA
mA
mA
mA
mA
mA
uA
uA
V
V
* NOTE : ICC1, ICC3, ICC4 and ICC6 are dependent on output loading and cycle rates. Specified values are obtained with the output open.
ICC is specified as an average current. In ICC1 and ICC3, address can be changed maximum once while RAS=VIL. In ICC4,
address can be changed maximum once within one Fast page mode cycle time, tPC.
5 Page 
DRAM MODULE
READ - MODIFY - WRTIE CYCLE
KMM372C80(8)3CK/CS
VIH -
RAS
VIL -
VIH -
CAS
VIL -
VIH -
A
VIL -
VIH -
W
VIL -
VIH -
OE
VIL -
VI/OH -
DQ
VI/OL -
tRWC
tRAS
tRP
tCRP
tRCD
tASR
tRAD
tRAH
tASC
tCAH
ROW
ADDR
COLUMN
ADDRESS
tRSH
tCAS
tCSH
tAWD
tCWD
tRWD
tOEA
tRWL
tCWL
tWP
tCLZ
tCAC
tAA
tRAC
tOED
tOEZ
VALID
DATA-OUT
tDS tDH
VALID
DATA-IN
Don′t care
Undefined
11 Page | ||
| Páginas | Total 20 Páginas | |
| PDF Descargar | [ Datasheet KMM372C883CS.PDF ] | |
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