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PDF VSC7710 Data sheet ( Hoja de datos )
| Número de pieza | VSC7710 | |
| Descripción | Photodetector Transimpedance Amplifier Family for Optical Communication | |
| Fabricantes | Vitesse | |
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VITESSE
SEMICONDUCTOR CORPORATION
Advance Product Information
VSC7710
Photodetector/Transimpedance Amplifier
Family for Optical Communication
Features
• Integrated Photodetector/Transimpedance Ampli-
fier Family Optimized for High Speed Optical
Communications Applications
• Integrated AGC
• Fibre Channel and Gigabit Ethernet
• High Bandwidth
• Low Input Noise Equivalent Power
• Single 5V Supply
Part Number
VSC7710
Data Rate
(Gb/s)
1.25
Bandwidth
(MHz)
1300
Input Noise
(µW rms)
.22
Optically Active Area
(µm diameter)
75
General Description
The VSC7710 integrated PIN Photodetector/Transimpedance Amplifiers provides a highly integrated solu-
tion for converting 1300 nm light from a fiber optic communications channel into a differential output voltage.
The benefits of Vitesse Semiconductor’s Gallium Arsenide H-GaAs-III process are fully utilized to provide a
very high bandwidth and low noise amplifier. The PIN detector is 75µm in diameter. The detector bias is sup-
plied internally eliminating the need for a separate bias connection. The sensitivity, duty cycle distortion and jit-
ter meet or exceed all Fibre Channel and Gigabit Ethernet application requirements. Parts are available in flat-
windowed or lensed packages.
The use of a photodetector and transimpedance amplifier hybrid, reduces the input capacitance, resulting in
higher sensitivity and bandwidth and improved speed of response. These parts can easily be used in developing
Fibre Channel and Gigabit Ethernet electro-optic Receivers for the 900-1600 nm spectral range which exhibit
very high performance and ease of use.
VSC7710 Block Diagram
+5V
+ D0
_
D1
G52139-0, Rev 2.2
04/02/01
© VITESSE SEMICONDUCTOR CORPORATION • 741 Calle Plano • Camarillo, CA 93012
Tel: (800) VITESSE • FAX: (805) 987-5896 • Email: [email protected]
Internet: www.vitesse.com
Page 1
1 page  
VITESSE
SEMICONDUCTOR CORPORATION
Advance Product Information
VSC7710
Photodetector/Transimpedance Amplifier
Family for Optical Communication
Thermal Resistance Calculation
In order to relate the junction temperature to an equivalent case temperature, the following thermal charac-
teristics of the package are provided (note that the thermal conductivity is identical for TO-46 and TO-56 pack-
age styles).
Table 5: Thermal Resistance Calculation for TO-56 and TO-46 Packages.
Chip Size
Chip Area A
Die height (Tdie)
Epoxy thickness (Tepoxy)
Header thickness (Theader)
(ave. for TO-46 and TO-56)
0.168cm x 0.104cm
0.015 cm2
0.066 cm
0.0076 cm
0.115 cm
K GaAs
K epoxy
K kovar
Thermal Conductivities
0.55W / cm °C
0.0186W / cm °C
0.17W / cm °C
Thermal Path
TJ
θGaAs
θEXPOXY
θKOVAR
TC
θGaAs = Tdie =
0.066
= 8 °C/W
KGaAsA
0.55 x 0.015
θepoxy = Tepoxy =
0.0076
= 27.24 °C/W
KepoxyA 0.0186 x 0.015
θkovar = Tkovar =
0.12 = 47 °C/W
KkovarA
0.17 x 0.015
θJC = Thermal Resistance from Junction to Case = (8 + 27.24 + 47) = 82.24 °C/W
Example:
For VSC7710 at nominal supply current of 25mA and VDD = 5V
Temperature rise from junction to case = 0.025A x 5V x 82.24 °C/W = 10.28 °C
G52139-0, Rev 2.2
04/02/01
© VITESSE SEMICONDUCTOR CORPORATION • 741 Calle Plano • Camarillo, CA 93012
Internet: www.vitesse.com
Page 5
5 Page 
VITESSE
SEMICONDUCTOR CORPORATION
Advance Product Information
VSC7710
Photodetector/Transimpedance Amplifier
Family for Optical Communication
To-56 Flat Window
Reference Isometric
G52139-0, Rev 2.2
04/02/01
© VITESSE SEMICONDUCTOR CORPORATION • 741 Calle Plano • Camarillo, CA 93012
Internet: www.vitesse.com
Page 11
11 Page | ||
| Páginas | Total 14 Páginas | |
| PDF Descargar | [ Datasheet VSC7710.PDF ] | |
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