|
|
PDF IRFR2605 Data sheet ( Hoja de datos )
| Número de pieza | IRFR2605 | |
| Descripción | Power MOSFET ( Transistor ) | |
| Fabricantes | International Rectifier | |
| Logotipo |  |
|
Hay una vista previa y un enlace de descarga de IRFR2605 (archivo pdf) en la parte inferior de esta página. Total 8 Páginas | ||
|
No Preview Available !
Previous Datasheet
Index
Next Data Sheet
HEXFET® Power MOSFET
Ultra Low On-Resistance
ESD Protected
Surface Mount (IRFR2605)
Straight Lead (IRFU2605)
150°C Operating Temperature
Repetitive Avalanche Rated
Fast Switching
Description
PD - 9.1253
IRFR2605
IRFU2605
D
G
S
VDSS = 55V
RDS(on) = 0.075Ω
ID = 19A
Fourth Generation HEXFETs from International Rectifier utilize advanced
processing techniques that achieve extremely low on-resistance per silicon area
and allow electrostatic discharge protection to be integrated in the gate structure.
These benefits, combined with the ruggedized device design that HEXFETs are
known for, provide the designer with extremely efficient and reliable device for use
in a wide variety of applications.
The D-PAK is designed for surface mounting using vapor phase, infrared, or wave
soldering techniques. The straight lead version (IRFU series) is for through-hole
mounting applications. Power dissipation levels up to 1.5 watts are possible in
typical surface mount applications.
Absolute Maximum Ratings
D-PAK
TO-252AA
I-PAK
TO-251AA
ID @ TC = 25°C
ID @ TC = 100°C
IDM
PD @TC = 25°C
PD @TC = 25°C
VGS
EAS
IAR
EAR
dv/dt
TJ, TSTG
VESD
Parameter
Continuous Drain Current, V GS @ 10V
Continuous Drain Current, V GS @ 10V
Pulsed Drain Current
Power Dissipation
Power Dissipation (PCB Mount)**
Linear Derating Factor
Linear Derating Factor (PCB Mount)**
Gate-to-Source Voltage
Single Pulse Avalanche Energy
Avalanche Current
Repetitive Avalanche Energy
Peak Diode Recovery dv/dt
Junction and Storage Temperature Range
Soldering Temperature, for 10 seconds
Human Body Model, 100pF, 1.5K Ω
Max.
19
12
76
50
3.1
0.40
0.025
±20
100
12
5.0
4.5
-55 to + 150
300 (1.6mm from case)
2000
Units
A
W
W/°C
V
mJ
A
mJ
V/ns
°C
V
Thermal Resistance
Parameter
Min.
Typ.
RθJC
RθJA
RθJA
Junction-to-Case
Junction-to-Ambient (PCB Mount)**
Junction-to-Ambient
——
——
——
** When mounted on 1" square PCB (FR-4 or G-10 Material).
For recommended footprint and soldering techniques refer to application note #AN-994.
Max.
2.5
40
62
Units
°C/W
To Order
1 page  
Previous Datasheet
Index
Next Data Sheet
20
16
12
8
4
0A
25 50 75 100 125 150
TC, Case Temperature (°C)
Fig 9. Maximum Drain Current Vs.
Case Temperature
VDS
VGS
RG
10 V
Pulse Width ≤ 1 µs
Duty Factor ≤ 0.1 %
IRFR2605
IRFU2605
RD
D.U.T.
VDD
Fig 10a. Switching Time Test Circuit
Fig 10b. Switching Time Waveforms
10
D = 0.50
1
0.20
0.10
0.05
0.02
0.1 0.01
SINGLE PULSE
(THERMAL RESPONSE)
0.01
0.00001
0.0001
PD M
N o tes:
1. Duty factor D = t1 / t2
t1
t2
2 . P e a k TJ = PD M x Z th J C + TC
0.001
0.01
0.1
t1 , Rectangular Pulse Duration (sec)
Fig 11. Maximum Effective Transient Thermal Impedance, Junction-to-Case
A
1
To Order
5 Page | ||
| Páginas | Total 8 Páginas | |
| PDF Descargar | [ Datasheet IRFR2605.PDF ] | |
Hoja de datos destacado
| Número de pieza | Descripción | Fabricantes |
| IRFR2605 | Power MOSFET ( Transistor ) | International Rectifier |
| IRFR2607Z | AUTOMOTIVE MOSFET | International Rectifier |
| IRFR2607ZPbF | Power MOSFET ( Transistor ) | International Rectifier |
| Número de pieza | Descripción | Fabricantes |
| SLA6805M | High Voltage 3 phase Motor Driver IC. |
 Sanken |
| SDC1742 | 12- and 14-Bit Hybrid Synchro / Resolver-to-Digital Converters. |
 Analog Devices |
|
DataSheet.es es una pagina web que funciona como un repositorio de manuales o hoja de datos de muchos de los productos más populares, |
| DataSheet.es | 2020 | Privacy Policy | Contacto | Buscar |