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PDF IRFU220 Data sheet ( Hoja de datos )

Número de pieza IRFU220
Descripción N-Channel Power MOSFETs
Fabricantes Intersil Corporation 
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Data Sheet
IRFR220, IRFU220
July 1999 File Number 2410.2
4.6A, 200V, 0.800 Ohm, N-Channel Power
MOSFETs
These are N-Channel enhancement mode silicon gate
power field effect transistors. They are advanced power
MOSFETs designed, tested, and guaranteed to withstand a
specified level of energy in the breakdown avalanche mode
of operation. All of these power MOSFETs are designed for
applications such as switching regulators, switching
convertors, motor drivers, relay drivers, and drivers for high
power bipolar switching transistors requiring high speed and
low gate drive power. These types can be operated directly
from integrated circuits.
Formerly developmental type TA9600.
Ordering Information
PART NUMBER
PACKAGE
BRAND
IRFR220
TO-252AA
IFR220
IRFU220
TO-251AA
IFU220
NOTE: When ordering, use the entire part number.
Features
• 4.6A, 200V
• rDS(ON) = 0.800
• Single Pulse Avalanche Energy Rated
• SOA is Power Dissipation Limited
• Nanosecond Switching Speeds
• Linear Transfer Characteristics
• High Input Impedance
• Related Literature
- TB334 “Guidelines for Soldering Surface Mount
Components to PC Boards”
Symbol
D
G
S
Packaging
JEDEC TO-251AA
SOURCE
DRAIN
GATE
DRAIN (FLANGE)
JEDEC TO-252AA
GATE
DRAIN
(FLANGE)
DRAIN
SOURCE
4-389
CAUTION: These devices are sensitive to electrostatic discharge; follow proper ESD Handling Procedures.
http://www.intersil.com or 407-727-9207 | Copyright © Intersil Corporation 1999

1 page




IRFU220 pdf
IRFR220, IRFU220
Typical Performance Curves Unless Otherwise Specified (Continued)
1.25
ID = 250µA
1.15
1.05
0.95
0.85
0.75
-40 0 40 80 120
TJ, JUNCTION TEMPERATURE (oC)
160
FIGURE 10. NORMALIZED DRAIN TO SOURCE BREAKDOWN
VOLTAGE vs JUNCTION TEMPERATURE
1000
800
VGS = 0V, f = 1MHz
CISS = CGS + CGD
CRSS = CGD
COSS CDS + CGD
600
CISS
400
200
0
1
COSS
CRSS
10
VDS, DRAIN TO SOURCE VOLTAGE (V)
102
FIGURE 11. CAPACITANCE vs DRAIN TO SOURCE VOLTAGE
5
PULSE DURATION = 80µs
DUTY CYCLE = 0.5% MAX
4 VDS = 50V
TJ = 25oC
3
2 TJ = 150oC
1
0
0 2 4 6 8 10
ID, DRAIN CURRENT (A)
FIGURE 12. TRANSCONDUCTANCE vs DRAIN CURRENT
102
PULSE DURATION = 80µs
DUTY CYCLE = 0.5% MAX
10
TJ = 150oC
1
TJ = 25oC
0.1
0
0.3 0.6 0.9 1.2
VSD, SOURCE TO DRAIN VOLTAGE (V)
1.5
FIGURE 13. SOURCE TO DRAIN DIODE VOLTAGE
20
ID = 4.6A
16
12
VDS = 160V
VDS = 100V
VDS = 40V
8
4
0
0 2 4 6 8 10
Qg(TOT), TOTAL GATE CHARGE (nC)
FIGURE 14. GATE TO SOURCE VOLTAGE vs GATE CHARGE
4-393

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