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PDF IRFR214 Data sheet ( Hoja de datos )

Número de pieza IRFR214
Descripción N-Channel Power MOSFETs
Fabricantes Intersil Corporation 
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Data Sheet
IRFR214, IRFU214
July 1999 File Number 3274.2
2.2A, 250V, 2.000 Ohm, N-Channel Power
MOSFETs
These are N-Channel enhancement mode silicon gate
power field effect transistors designed, tested, and
guaranteed to withstand a specified level of energy in the
breakdown avalanche mode of operation. They are
advanced power MOSFETs are designed for use in
applications such as switching regulators, switching
converters, motor drivers, relay drivers and drivers for high-
power bipolar switching transistors requiring high speed and
low gate-drive power. These transistors can be operated
directly from integrated circuits.
Formerly developmental type TA17443.
Ordering Information
PART NUMBER
PACKAGE
BRAND
IRFR214
TO-252AA
IRFR214
IRFU214
TO-251AA
IRFU214
NOTE: When ordering, use the entire part number.
Packaging
JEDEC TO-251AA
SOURCE
DRAIN
GATE
DRAIN (FLANGE)
Features
• 2.2A, 250V
• rDS(ON) = 2.000
• Single Pulse Avalanche Energy Rated
• SOA is Power Dissipation Limited
• Nanosecond Switching Speeds
• High Input Impedance
• 150oC Operating Temperature
• Related Literature
- TB334 “Guidelines for Soldering Surface Mount
Components to PC Boards”
Symbol
D
G
S
JEDEC TO-252AA
GATE
SOURCE
DRAIN (FLANGE)
4-383
CAUTION: These devices are sensitive to electrostatic discharge; follow proper ESD Handling Procedures.
http://www.intersil.com or 407-727-9207 | Copyright © Intersil Corporation 1999

1 page




IRFR214 pdf
IRFR214, IRFU214
Typical Performance Curves Unless Otherwise Specified (Continued)
2.5
PULSE DURATION = 80µs
DUTY CYCLE = 0.5% MAX
2.0 VGS = 10V, ID = 5.6A
500
400
1.5 300
1.0
0.5
0
-60 -40 -20 0 20 40 60 80 100 120 140 160
TJ, JUNCTION TEMPERATURE (oC)
200
100
0
10
VGS = 0V, f = 1MHz
CISS = CGS + CGD
CRSS = CGD
COSS = CDS + CGS
CISS
COSS
CRSS
101
VDS, DRAIN TO SOURCE VOLTAGE (V)
102
FIGURE 8. NORMALIZED DRAIN TO SOURCE ON
RESISTANCE vs JUNCTION TEMPERATURE
101 PULSE DURATION = 80µs
DUTY CYCLE = 0.5% MAX
VGS = 10V
TJ = 150oC
100 TJ = 25oC
FIGURE 9. CAPACITANCE vs DRAIN TO SOURCE VOLTAGE
20
ID = 2.7A
16
12
VDS = 200V
VDS = 125V
VDS = 50V
8
4
10-1
0.6
0.8 1.0 1.2
VSD, SOURCE TO DRAIN VOLTAGE (V)
1.4
FIGURE 10. SOURCE TO DRAIN DIODE VOLTAGE
Test Circuits and Waveforms
0
0 2 4 6 8 10
Qg, GATE CHARGE (nC)
FIGURE 11. GATE TO SOURCE VOLTAGE vs GATE CHARGE
VARY tP TO OBTAIN
REQUIRED PEAK IAS
VGS
tP
0V
RG
VDS
L
DUT
+
VDD
-
IAS
0.01
0
tP
IAS
BVDSS
VDS
VDD
tAV
FIGURE 12. UNCLAMPED ENERGY TEST CIRCUIT
FIGURE 13. UNCLAMPED ENERGY WAVEFORMS
4-387

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