(PDF) RN6006 Datasheet - TOSHIBA Transistor Silicon NPN Epitaxial Type (PCT Process)

Número de pieza	RN6006
Descripción	TOSHIBA Transistor Silicon NPN Epitaxial Type (PCT Process)
Fabricantes	Toshiba Semiconductor
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No Preview Available ! TOSHIBA Transistor Silicon NPN Epitaxial Type (PCT Process) RN6006 Motor Drive Circuit Applications Power Amplifier Applications Power Switching Applications l With built-in bias resistors l Simplify circuit design l Reduce a quantity of parts and manufacturing process l Small flat package l PC = 1~2W (mounted on ceramic substrate) l Complementary to RN5006 Equivalent Circuit RN6006 Unit: mm Maximum Ratings (Ta = 25°C) Characteristic Symbol Rating Collector-base voltage VCBO −10 Collector-emitter voltage VCEO −10 Emitter-base voltage VEBO −6 Collector current DC Pulse (Note1) IC ICP −2 −4 Base current IB −0.4 Collector power dissipation PC 500 Collector power dissipation PC * 1000 Junction temperature Tj 150 Storage temperature range Tstg −55~150 Note: Pulse width =< 10ms, duty cycle <= 30 % * : Mounterd on ceramic substrate (250mm2 ´ 0.8t) JEDEC JEITA TOSHIBA Weight: 0.05g (typ.) ― SC-62 2-5K1A Marking Unit V V V A A mW mW °C °C 1 2001-10-29 1 page

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PDF RN6006 Data sheet ( Hoja de datos )