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PDF STB7NC70Z Data sheet ( Hoja de datos )
| Número de pieza | STB7NC70Z | |
| Descripción | N-CHANNEL MOSFET | |
| Fabricantes | ST Microelectronics | |
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STP7NC70Z - STP7NC70ZFP
STB7NC70Z - STB7NC70Z-1
N-CHANNEL 700V - 1.1Ω - 6A TO-220/FP/D2PAK/I2PAK
Zener-Protected PowerMESH™III MOSFET
TYPE
VDSS
RDS(on)
ID
STP7NC70Z/FP
700V < 1.38Ω
6A
STB7NC70Z/-1
700V < 1.38Ω
6A
s TYPICAL RDS(on) = 1.1Ω
s EXTREMELY HIGH dv/dt AND CAPABILITY GATE
TO - SOURCE ZENER DIODES
s 100% AVALANCHE TESTED
s VERY LOW GATE INPUT RESISTANCE
s GATE CHARGE MINIMIZED
DESCRIPTION
The third generation of MESH OVERLAY™ Power
MOSFETs for very high voltage exhibits unsurpassed
on-resistance per unit area while integrating back-to-
back Zener diodes between gate and source. Such ar-
rangement gives extra ESD capability with higher rug-
gedness performance as requested by a large variety
of single-switch applications.
TO-220
3
1
D2PAK
3
2
1
TO-220FP
I2PAK1 2 3
(Tabless TO-220)
APPLICATIONS
s SINGLE-ENDED SMPS IN MONITORS,
COMPUTER AND INDUSTRIAL APPLICATION
s WELDING EQUIPMENT
ABSOLUTE MAXIMUM RATINGS
Symbol
Parameter
VDS Drain-source Voltage (VGS = 0)
VDGR
Drain-gate Voltage (RGS = 20 kΩ)
VGS Gate- source Voltage
ID Drain Current (continuous) at TC = 25°C
ID Drain Current (continuous) at TC = 100°C
IDM (1) Drain Current (pulsed)
PTOT
Total Dissipation at TC = 25°C
Derating Factor
IGS Gate-source Current
VESD(G-S) Gate source ESD(HBM-C=100pF, R=15KΩ)
dv/dt
Peak Diode Recovery voltage slope
VISO
Insulation Withstand Voltage (DC)
Tstg Storage Temperature
Tj Max. Operating Junction Temperature
(•)Pulse width limited by safe operating area
May 2003
Value
Unit
STP(B)7NC70Z(-1) STP7NC70ZFP
700 V
700 V
± 25 V
6 6(*) A
3.7
3.7(*)
A
24 24 A
125 40 W
1 0.32 W/°C
±50 mA
3 KV
3 V/ns
--
2000
V
–65 to 150
°C
150 °C
(1)ISD ≤6A, di/dt ≤100A/µs, VDD ≤ V(BR)DSS, Tj ≤ TJMAX
(2).Limited only by maximum temperature allowed
1/13
1 page  
Transconductance
STP7NC70Z - STP7NC70ZFP - STB7NC70Z - STB7NC70Z-1
Static Drain-source On Resistance
Gate Charge vs Gate-source Voltage
Capacitance Variations
Normalized Gate Threshold Voltage vs Temp.
Normalized On Resistance vs Temperature
5/13
5 Page 
STP7NC70Z - STP7NC70ZFP - STB7NC70Z - STB7NC70Z-1
DIM.
A
A1
B
B2
C
C2
D
E
G
L
L2
L3
TO-263 (D2PAK) MECHANICAL DATA
MIN.
4.4
2.49
0.7
1.14
0.45
1.21
8.95
10
4.88
15
1.27
1.4
mm
TYP.
MAX.
4.6
2.69
0.93
1.7
0.6
1.36
9.35
10.4
5.28
15.85
1.4
1.75
MIN.
0.173
0.098
0.027
0.044
0.017
0.047
0.352
0.393
0.192
0.590
0.050
0.055
inch
TYP.
MAX.
0.181
0.106
0.036
0.067
0.023
0.053
0.368
0.409
0.208
0.624
0.055
0.068
A
C2
E
D
DET AIL "A"
C
A1
B2
DET AIL "A"
B
G
L2 L L3
P011P6/E
11/13
11 Page | ||
| Páginas | Total 13 Páginas | |
| PDF Descargar | [ Datasheet STB7NC70Z.PDF ] | |
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