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PDF STB70NF03L Data sheet ( Hoja de datos )
| Número de pieza | STB70NF03L | |
| Descripción | N-CHANNEL MOSFET | |
| Fabricantes | ST Microelectronics | |
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STP70NF03L
STB70NF03L-1
N-CHANNEL 30V - 0.008Ω - 70A TO-220/I2PAK
LOW GATE CHARGE STripFET™ POWER MOSFET
TYPE
VDSS
RDS(on)
STP70NF03L
STB70NF03L-1
30 V
30 V
< 0.01 Ω
< 0.01 Ω
s TYPICAL RDS(on) = 0.008 Ω
s TYPICAL Qg = 35 nC @ 10 V
s OPTIMAL RDS(on) x Qg TRADE-OFF
s CONDUCTION LOSSES REDUCED
s SWITCHING LOSSES REDUCED
ID
70 A
70 A
DESCRIPTION
This application specific Power Mosfet is the third
generation of STMicroelectronics unique “Single
Feature Size™” strip-based process. The result-
ing transistor shows the best trade-off between on-
resistance and gate charge. When used as high
and low side in buck regulators, it gives the best
performance in terms of both conduction and
switching losses. This is extremely important for
motherboards where fast switching and high effi-
ciency are of paramount importance.
APPLICATIONS
s SPECIFICALLY DESIGNED AND OPTIMISED
FOR HIGH EFFICIENCY CPU CORE DC/DC
CONVERTERS
3
2
1
TO-220
123
I2PAK
INTERNAL SCHEMATIC DIAGRAM
ABSOLUTE MAXIMUM RATINGS
Symbol
Parameter
VDS Drain-source Voltage (VGS = 0)
VDGR
Drain-gate Voltage (RGS = 20 kΩ)
VGS Gate- source Voltage
ID Drain Current (continuos) at TC = 25°C
ID Drain Current (continuos) at TC = 100°C
IDM (q) Drain Current (pulsed)
PTOT
Total Dissipation at TC = 25°C
Derating Factor
dv/dt (1) Peak Diode Recovery voltage slope
Tstg Storage Temperature
Tj Max. Operating Junction Temperature
(q) Pulse width limited by safe operating area
March 2001
Value
30
30
± 15
70
50
280
100
0.67
4
–65 to 175
175
Unit
V
V
V
A
A
A
W
W/°C
V/ns
°C
°C
(1) ISD ≤70A, di/dt ≤290A/µs, VDD =24 V ; Tj ≤ TJMAX.
1/9
1 page  
Normalized Gate Threshold Voltage vs
Temperature
STP70NF03L/STB70NF03L-1
Normalized On Resistance vs Temperature
Source-drain Diode Forward Characteristics
5/9
5 Page | ||
| Páginas | Total 9 Páginas | |
| PDF Descargar | [ Datasheet STB70NF03L.PDF ] | |
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