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PDF KM736V687 Data sheet ( Hoja de datos )
| Número de pieza | KM736V687 | |
| Descripción | 64Kx36-Bit Synchronous Burst SRAM | |
| Fabricantes | Samsung Semiconductor | |
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KM736V687
PRELIMINARY
64Kx36 Synchronous SRAM
Document Title
64Kx36-Bit Synchronous Burst SRAM, 3.3V Power
Datasheets for 100TQFP
Revision History
Rev. No.
History
Rev. 0.0
Initial draft
Rev. 1.0
Final spec release
Draft Date
Nov. 02. 1996
May. 27. 1997
Remark
Preliminary
Final
The attached data sheets are prepared and approved by SAMSUNG Electronics. SAMSUNG Electronics CO., LTD. reserve the right to change the
specifications. SAMSUNG Electronics will evaluate and reply to your requests and questions on the parameters of this device. If you have any ques-
tions, please contact the SAMSUNG branch office near your office, call or contact Headquarters.
-1-
May 1997
Rev 1.0
1 page  
KM736V687
PRELIMINARY
64Kx36 Synchronous SRAM
SYNCHRONOUS TRUTH TABLE
CS1 CS2 CS2 ADSP ADSC ADV WRITE CLK Address Accessed
HXX
X
LX X ↑
N/A
LLX
L
XX X ↑
N/A
LXH
L
XX X ↑
N/A
LLX
X
LX X ↑
N/A
LXH
X
LX X ↑
N/A
LHL
L
XX X ↑
External Address
LHL
H
LX L ↑
External Address
LHL
H
LX H↑
External Address
XXX
H
HL
H
↑
Next Address
HXX
X
HL
H↑
Next Address
XXX
H
HL
L
↑
Next Address
HXX
X
HL
L
↑
Next Address
XXX
H
HH
H
↑
Current Address
HXX
X
HH H ↑
Current Address
XXX
H
HH
L
↑
Current Address
HXX
X
HH
L
↑
Current Address
NOTE : 1. X means "Don′t Care".
2. The rising edge of clock is symbolized by ↑.
3. WRITE = L means Write operation in WRITE TRUTH TABLE.
WRITE = H means Read operation in WRITE TRUTH TABLE.
4. Operation finally depends on status of asynchronous input pins(ZZ and OE).
Operation
Not Selected
Not Selected
Not Selected
Not Selected
Not Selected
Begin Burst Read Cycle
Begin Burst Write Cycle
Begin Burst Read Cycle
Continue Burst Read Cycle
Continue Burst Read Cycle
Continue Burst Write Cycle
Continue Burst Write Cycle
Suspend Burst Read Cycle
Suspend Burst Read Cycle
Suspend Burst Write Cycle
Suspend Burst Write Cycle
WRITE TRUTH TABLE
GW
BW
WEa
WEb
WEc
WEd
HH X X X X
H L HHHH
HL LHHH
H L H L HH
HLHH L L
HL L L L L
LXXXXX
NOTE : 1. X means "Don′t Care".
2. All inputs in this table must meet setup and hold time around the rising edge of CLK(↑).
Operation
READ
READ
WRITE BYTE a
WRITE BYTE b
WRITE BYTE c and d
WRITE ALL BYTEs
WRITE ALL BYTEs
ABSOLUTE MAXIMUM RATINGS*
Parameter
Symbol
Rating
Unit
Voltage on VDD Supply Relative to VSS
VDD
-0.3 to 4.6
V
Voltage on VDDQ Supply Relative to VSS
VDDQ
VDD
V
Voltage on Input Pin Relative to VSS
VIN
-0.3 to 6.0
V
Voltage on I/O Pin Relative to VSS
VIO
-0.3 to VDDQ+0.5
V
Power Dissipation
PD 1.2 W
Storage Temperature
TSTG
-65 to 150
°C
Operating Temperature
TOPR
0 to 70
°C
Storage Temperature Range Under Bias
TBIAS
-10 to 85
°C
*NOTE : Stresses greater than those listed under "Absolute Maximum Ratings" may cause permanent damage to the device. This is a stress rating only
and functional operation of the device at these or any other conditions above those indicated in the operating sections of this specification is
not implied. Exposure to absolute maximum rating conditions for extended periods may affect reliability.
-5-
May 1997
Rev 1.0
5 Page 
KM736V687
PRELIMINARY
64Kx36 Synchronous SRAM
- 11 -
May 1997
Rev 1.0
11 Page | ||
| Páginas | Total 15 Páginas | |
| PDF Descargar | [ Datasheet KM736V687.PDF ] | |
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